sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SiC MOSFET Modules
Brand:ROHM
Particular Year:25+
Package:Module
Delivery Date:New and original
Stock: 1000pcs
BSM600D12P4G103 is a half-bridge power module composed of SiC-DMOSFET. It is highly suitable for applications such as motor drives, inverters, converters, photovoltaic power generation, wind power generation and IH equipment.
The BSM600D12P4G103 has the following parameters:
Technology: Silicon carbide (SiC)
Configuration: 2 N- Channel (dual)
FET function: -
Drain-source voltage (Vdss) : 1200V (1.2kV)
Current - Continuous drain (Id) at 25°C: 567A (Tc)
The on-resistance (maximum value) at different ids and Vgs: -
Vgs(th) (maximum value) at different ids: 4.8V@291.2mA
Gate charge (Qg) (maximum value) at different Vgs: -
Input capacitance (Ciss) (maximum value) at different Vds: 59,000 pF @ 10V
Power - Maximum value: 1.78kW (Tc)
Operating temperature: 175°C (TJ)
Installation type: Base installation
Package/Shell: Module
Model
Brand
Package
Quantity
Describe
ON
PIM-36
1000
4 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC
ON
PIM-18
1000
10 mohm SiC M3S MOSFET Module, 1200 V, 2-PACK half-bridge topology, F1 package
ON
PIM-18
1000
8 mΩ SiC M3S MOSFET module, 1200 V, 2-PACK half-bridge topology, F1 package
ON
PIM-18
1000
8 mΩ SiC M3S MOSFET module, 1200 V, 2-PACK half-bridge topology, F1 package
Microchip
Module
1000
1200V, HPD, 3 Phase Bridge + Actuation Full-Options Hybrid Power Drive mSiC™ MOSFET Module
Microchip
SOT-227
1000
SiC MOSFET module N Channel 1200 V 55A (Tc) 245W (Tc) SOT-227 (ISOTOP®)
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ROHM Co., Ltd. is one of the worlds leading semiconductor manufacturers, headquartered in Kyoto, Japan, ROHM designs and manufactures semiconductors, integrated circuits and other electronic components. These components have a place in the rapidly cha…
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