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NXH040F120MNF1PG: Silicon Carbide (SiC) Module - 1200V, 40mohm, SiC MOSFET Module

Model: NXH040F120MNF1PG

Package: PIM-22

Type: Silicon Carbide (SiC) Module - SiC MOSFET Module

Overview:

The NXH040F120MNF1PG is a SiC MOSFET module that contains a 40 ohm SiC MOSFET full bridge and an NTC thermistor in the F1 module.

NXH040F120MNF1PG - Product Specifications:

Technology: Silicon Carbide (SiC)

Configuration: 4 N-Channel

Drain-Source Voltage (Vdss): 1200V (1.2kV)

Current at 25°C - Continuous Drain (Id): 30A (Tc)

On-resistance (max) at different Id, Vgs: 56 mOhm @ 25A, 20V

Vgs(th) at Different Id (Max): 4, 3V @ 10mA

Gate Charge (Qg) at Vgs (max): 122.1nC @ 20V

Input capacitance (Ciss) at varying Vds (max): 1505pF @ 800V

Power - Max: 74W (Tj)

Operating Temperature: -40°C ~ 175°C (Tj)

Mounting Type: Chassis Mount

Package/Housing: Module

Supplier Device Package: 22-PIM (33.8x42.5)

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