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Product Description:Silicon Carbide (SiC) Module - 1200V, 40mohm, SiC MOSFET Module
Package:PIM-22Product Description:Silicon Carbide (SiC) Module - 1200V Three Phase Bridge Power Module
Package:APM-32Product Description:650V, 32mohm, Silicon Carbide (SiC) MOSFET Transistor, TO-247-3
Package:TO-247-3Product Description:650V, 25mohm, N-Channel - EliteSiC, Silicon Carbide (SiC) MOSFET Transistor
Package:TO-247-3Product Description:2300V 6.0 mΩ Silicon Carbide Half-Bridge Module
Package:ModuleProduct Description:2300V 7.5 mΩ Silicon Carbide Half-Bridge Module
Package:ModuleProduct Description:2300V 5.0 mΩ Silicon Carbide Half-Bridge Module
Package:ModuleProduct Description:CoolSiC™ Schottky diode 2000 V in TO-247PLUS-4 HCC package
Package:PG-TO247-4Product Description:750V CoolSiC™ Silicon Carbide MOSFET Transistors
Package:PG-TO263-7Product Description:750V CoolSiC™ Silicon Carbide MOSFET Transistors
Package:PG-TO263-7Product Description:600V CoolMOS™ 8 SiC MOSFET power transistor
Package:TO-247-4Product Description:SiC MOSFET Through hole N channel 1200 V 20A (Tc) 107W (Tc) TO-247-4L (X)
Package:TO-247-4Product Description:SiC MOSFET Through hole N Channel 1200 V 36A (Tc) 170W (Tc) TO-247-4L (X)
Package:TO-247-4Product Description:SiC MOSFET Through hole N Channel 1200 V 40A (Tc) 182W (Tc) TO-247-4L (X)
Package:TO-247-4Product Description:SiC MOSFET Through hole N Channel 1200 V 100A (Tc) 431W (Tc) TO-247-4L (X)
Package:TO-247-4Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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