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Shenzhen  Mingjiada Electronics Co., Ltd.

Service Telephone:86-755-83294757

Product Classification

AI Processor Chip

AI Accelerators

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Model

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Parameter Description

MOQ

Stock

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Unit Price

Operation

NVH4L032N065M3S
ON

Product Description:Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L

Package:TO-247-4
10pcs
3000
1 +
10 +
25 +
50 +
>=100
SCT025W120G3AG
ST

Product Description:1200 V Automotive grade Silicon Carbide Power MOSFET, 27 Mω, 56 A, HiP247

Package:HiP247-3
10pcs
3000
1 +
10 +
25 +
50 +
>=100
NXH020P120MNF1PG
ON

Product Description:1200V 20 mohm Silicon Carbide Modules

Package:Module
10pcs
1000
1 +
10 +
25 +
50 +
>=100
HAS310M17BM3

Product Description:1700V 310A Silicon Carbide Half-Bridge Module

Package:Module
10pcs
1000
1 +
10 +
25 +
50 +
>=100
UJ3D1220KSD

Product Description:20 A, 1200 V SiC Merged PiN-Schottky (MPS) Dual Diode

Package:TO-247-3
10pcs
3000
1 +
10 +
25 +
50 +
>=100
UJ3D06560KSD

Product Description:60 A, 650 V SiC combined pin Schottky (MPS) dual channel diodes

Package:TO-247-3
10pcs
3000
1 +
10 +
25 +
50 +
>=100
UJ3D06520KSD

Product Description:20 A, 650 V SiC Merged PiN-Schottky (MPS) Dual Diode

Package:TO-247-3
10pcs
3000
1 +
10 +
25 +
50 +
>=100
UJ3D06530TS

Product Description:30 A, 650 V SiC Merged PiN-Schottky (MPS) Diode

Package:TO-220-2
10pcs
3000
1 +
10 +
25 +
50 +
>=100
NTHL032N065M3S
ON

Product Description:Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-3L

Package:TO-247-3
10pcs
3000
1 +
10 +
25 +
50 +
>=100
NTH4L032N065M3S
ON

Product Description:Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L

Package:TO-247-4
10pcs
3000
1 +
10 +
25 +
50 +
>=100
NTBG032N065M3S
ON

Product Description:Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, D2PAK-7L

Package:D2PAK-7
10pcs
3000
1 +
10 +
25 +
50 +
>=100
NVBG032N065M3S
ON

Product Description:Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, D2PAK-7L

Package:D2PAK-7
10pcs
3000
1 +
10 +
25 +
50 +
>=100
NVXK2VR80WXT2
ON

Product Description:1200V three-phase bridge silicon carbide (SiC) module

Package:APM-32
10pcs
1000
1 +
10 +
25 +
50 +
>=100
NXH010P90MNF1PG
ON

Product Description:10 mΩ SiC M2 MOSFET, 900 V, 2-PACK half-bridge topology, F1 package

Package:Module
10pcs
1000
1 +
10 +
25 +
50 +
>=100
NXH010P120M3F1PG
ON

Product Description:10 mohm SiC M3S MOSFET Module, 1200 V, 2-PACK half-bridge topology, F1 package

Package:PIM-18
10pcs
1000
1 +
10 +
25 +
50 +
>=100
NXH008P120M3F1PG
ON

Product Description:8 mΩ SiC M3S MOSFET module, 1200 V, 2-PACK half-bridge topology, F1 package

Package:PIM-18
10pcs
1000
1 +
10 +
25 +
50 +
>=100
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Contact Number:86-755-83294757

Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585

Business Hours:9:00-18:00

E-mail:sales@hkmjd.com

Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong

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