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Product Description:Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L
Package:TO-247-4Product Description:1200 V Automotive grade Silicon Carbide Power MOSFET, 27 Mω, 56 A, HiP247
Package:HiP247-3Product Description:1200V 20 mohm Silicon Carbide Modules
Package:ModuleProduct Description:1700V 310A Silicon Carbide Half-Bridge Module
Package:ModuleProduct Description:20 A, 1200 V SiC Merged PiN-Schottky (MPS) Dual Diode
Package:TO-247-3Product Description:60 A, 650 V SiC combined pin Schottky (MPS) dual channel diodes
Package:TO-247-3Product Description:20 A, 650 V SiC Merged PiN-Schottky (MPS) Dual Diode
Package:TO-247-3Product Description:30 A, 650 V SiC Merged PiN-Schottky (MPS) Diode
Package:TO-220-2Product Description:Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-3L
Package:TO-247-3Product Description:Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L
Package:TO-247-4Product Description:Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, D2PAK-7L
Package:D2PAK-7Product Description:Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, D2PAK-7L
Package:D2PAK-7Product Description:1200V three-phase bridge silicon carbide (SiC) module
Package:APM-32Product Description:10 mΩ SiC M2 MOSFET, 900 V, 2-PACK half-bridge topology, F1 package
Package:ModuleProduct Description:10 mohm SiC M3S MOSFET Module, 1200 V, 2-PACK half-bridge topology, F1 package
Package:PIM-18Product Description:8 mΩ SiC M3S MOSFET module, 1200 V, 2-PACK half-bridge topology, F1 package
Package:PIM-18Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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