sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel MOSFET
Brand:ON
Particular Year:24+
Package:5-DFN
Delivery Date:New and Original
Stock: 15000pcs
The ON Semiconductor NVMFS5C410NWFAFT1G Trench6 N-Channel MV MOSFETs are 40V MOSFETs produced using an advanced power trench process combined with shielded gate technology.The process is optimised to minimise on-resistance, and in addition features an excellent soft diode that maintains excellent switching performance.
NVMFS5C410NWFAFT1G Product Attributes:
Product Category: MOSFETs
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SO-8FL
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds-Drain-source breakdown voltage: 40 V
Id-Continuous drain current: 300 A
Rds On-drain on-resistance: 760 uOhms
Vgs - gate-source voltage: - 20 V, + 20 V
Vgs th - gate-source threshold voltage: 3.5 V
Qg-gate charge: 86 nC
Minimum operating temperature: - 55 C
Maximum operating temperature: + 175 C
Pd-power dissipation: 166 W
Channel mode: Enhancement
Qualification: AEC-Q101
Series: NVMFS5C410N
Configuration: Single
Downtime: 173 ns
Forward transconductance - min: 190 S
Product Type: MOSFET
Rise Time: 162 ns
Factory Package Quantity: 1500
Sub Category: MOSFETs
Transistor Type: 1 N-Channel
Typical Off Delay Time: 227 ns
Typical turn-on delay time: 54 ns
Unit Weight: 187 mg
Model
Brand
Package
Quantity
Describe
ON
TO-247-3
2500
MOSFET - Power, Single N-Channel, SUPERFET V, Easy Drive, TO247-3L 600 V, 99 m, 33 A
ST
PowerFLAT-4
1000
N-channel logic level 40 V, 2.2 mΩ max., 167 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
ST
PowerFLAT-4
1000
N-channel logic level 40 V, 2.2 mΩ max., 167 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
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