sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IGBT Transistor
Brand:ON
Particular Year:25+
Package:TO-247-3
Delivery Date:New and Original
Stock: 5000pcs
AFGHL25T120RWD: 1200V, 25A, automotive IGBT transistor, TO-247-3
AFGHL25T120RWD is an insulated gate bipolar transistor (IGBT) compliant with the AEC Q101 standard, featuring a robust and cost-effective Field Stop VII trench structure.
AFGHL25T120RWD delivers exceptional performance in demanding switching applications, featuring low on-voltage and minimal switching losses, making it ideal for both hard-switching and soft-switching topologies in automotive applications.
AFGHL25T120RWD Specifications:
Product Type: Insulated Gate Bipolar Transistor (IGBT)
Technology: Si
Package/Case: TO-247-3
Mounting Style: Through-Hole
Configuration: Single
Collector-Emitter Maximum Voltage VCEO: 1.2 kV
Collector-Emitter Saturation Voltage: 1.38 V
Gate-Emitter Maximum Voltage: 20 V
Continuous Collector Current at 25°C: 25 A
Pd-Power Dissipation: 468 W
Minimum Operating Temperature: -55°C
Maximum operating temperature: +175°C
Maximum continuous collector current Ic: 25 A
Gate-emitter leakage current: 400 nA
AFGHL25T120RWD Applications:
HEV-EV battery heater
HEV-EV electric compressor
HEV-EV onboard charger
Model
Brand
Package
Quantity
Describe
ST
D2PAK
5000
Trench gate field-stop 650 V, 30 A low-loss M series IGBT in a D²PAK package
IXYS
TO-220-3
5000
650V, Auroral Transmission IGBT Transistor for 20-60kHz Switching, TO-220-3
IXYS
TO-247-3
5000
900V, 165A, High Speed IGBT Transistor for 20-50 kHz Switching, TO-247-3
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ON Semiconductor (Nasdaq: ON) is the premier supplier of high-performance silicon solutions for energy-efficient electronics. The companys product portfolio includes power and signal management, logic, discrete and custom devices to help customers sol…
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