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The NCD57090EDWR2G IGBT/MOSFET gate drivers are high-current, single-channel gate drivers for IGBTs and MOSFETs with 5kVrms internal current isolation.The NCD57090EDWR2G offers high system efficiency and reliability in high-power applications. These devices accept complementary inputs and, depending on pin configuration, offer options such as active Miller clamp, negative supply, and separate high-side and low-side (OUTH and OUTL) driver outputs to ease system design. With a wide input bias voltage range and 3.3V to 20.0V signal levels.

Specification

Technology: Capacitively coupled  

Number of Channels: 1  

Voltage - Isolation: 5000Vrms  

Common mode transient immunity (min): 100kV/µs (max)  

Propagation Delay tpLH / tpHL (max): 90ns, 90ns  

Pulse Width Distortion (max): 25ns  

Rise/Fall Time (typical): 13ns, 13ns  

Current - Output High, Low: 6.5A, 6.5A  

Current - Output Peak: 6.5A  

Voltage - Output Supply: 0V ~ 32V  

Operating Temperature: -40°C ~ 125°C 

The ON NCD57090EDWR2G IGBT/MOSFET gate driver is available in a compact SOIC-8 package.

Typical Applications

Motor control

Uninterruptible power supplies (UPS)

Automotive applications

Industrial power supplies

Solar Inverters

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