sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) MOSFET
Brand:ON
Particular Year:25+
Package:D2PAK-7
Delivery Date:New and original
Stock: 2000pcs
The NVBG050N170M1 silicon carbide (SiC) MOSFET launched by onsemi is part of the 1700V M1 planar SiC MOSFET series, which is specifically optimized for fast-switching applications. This MOSFET features a maximum of 76mΩ (at a maximum RDS(ON) of 20V, a drain-to-source voltage of 1700V, a continuous drain current of 50A, and an ultra-low gate charge/charge (typical QG(tot) = 107nC)).
Key features
Typical RDS(on) = 53mΩ (VGS = 20V)
Ultra-low gate charge (typical QG(tot) = 107nC)
Low effective output capacitance (typical Coss = 97pF)
100% avalanche tested
Halogen-free
Compliant with the RoHS Directive (7a exemption)
Lead-free 2LI (secondary interconnect)
The effective output capacitance of the NVBG050N170M1 SiC MOSFET is relatively low (typical Coss = 97pF), and the gate-to-source voltage is -15V/+25V. This silicon carbide MOSFET has undergone 100% avalanche testing and is packaged in D2PAK-7L. The NVBG050N170M1 silicon carbide (SiC) MOSFET is lead-free 2LI, halogen-free, complies with RoHS standards, and is exempt from Section 7a. Its typical applications include flyback converters, DC-DC converters for electric vehicles/hybrid vehicles, and on-board chargers (OBCs).
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