sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Gate Drivers
Brand:ON
Particular Year:24+
Package:QFN-24
Delivery Date:New and Original
Stock: 3000pcs
NCV51705MNTWG - Single 6A High-Speed, Low-Side SiC MOSFET Gate Drivers
Product Overviews
NCV51705MNTWG is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losses are also minimized.
NCV51705 - Low Side Switching Configuration:
Key Features
• High Peak Output Current with Split Output Stages to Allow Independent Turn−ON/Turn−OFF Adjustment;
♦ Source Capability: 6 A
♦ Sink Capability: 6 A
• Extended Positive Voltage Rating for Efficient SiC MOSFET Operation during the Conduction Period
• Adjustable, On−board Regulated Charge Pump
• Negative Voltage Drive for Fast Turn−off
• Built−in Negative Charge Pump
• Accessible 5 V Reference / Bias Rail for Digital Oscillator Supply
• Adjustable Under−Voltage Lockout
• Desaturation Function
• Small & Low Parasitic Inductance QFN24 Package with Wettable Flank
Typical Applications
• Driving SiC MOSFET for Automotive Applications
• Automotive Inverters, Converter, and Motor Drivers
• PFC, AC to DC and DC to DC Converters
Model
Brand
Package
Quantity
Describe
TI
VQFN-54
2000
600V 50mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode
TI
VQFN-54
2000
600V 50mΩ GaN FET with integrated driver, protection and zero-voltage detection
ST
24-VFQFN
2222
Half bridge (3) Driver DC motor, Universal Power MOSFET, IGBT 24-VFQFPN (4x4)
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ON Semiconductor (Nasdaq: ON) is the premier supplier of high-performance silicon solutions for energy-efficient electronics. The companys product portfolio includes power and signal management, logic, discrete and custom devices to help customers sol…
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