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sales@hkmjd.com
sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:FDMT80060DC
Data Manual:
FDMT80060DC.pdf
Brand:ON
Particular Year:23+
Package:8-PowerVDFN
Delivery Date:New and Original
Stock: 8000pcs
FDMT80060DC Advancements in both silicon and DUAL COOL package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient thermal resistance.
Features
Max rDS(on) = 1.1 m at VGS = 10 V, ID = 43 A
Max rDS(on) = 1.3 m at VGS = 8 V, ID = 37 A
Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency
Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery
Low Profile 8x8 mm MLP Package
MSL1 Robust Package Design
100% UIL Tested
This Device is Pb−Free, Halide Free and RoHS Compliant
Applications
OringFET / Load Switching
Synchronous Rectification
DC−DC Conversion
FDMT80060DC is 60 V, 292 A, 1.1 mΩ MOSFET – N-Channel, POWERTRENCH.
Model
Brand
Package
Quantity
Describe
ST
PowerFLAT 5x6
1500
N-channel 60 V, 1.2 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
ST
PowerFLAT™ 5x6
15000
Automotive Grade N-Channel 80 V, 3.15 mOhm typical, 130 A STripFET F7 Power MOSFET, PowerFLAT 5x6 Package
ST
TO-247
8000
N-Channel 950 V, 0.110 Ohm Typ, 38 A MDmesh K5 Power MOSFET, TO-247 Package
ST
TO-247-3
1000
N-Channel 600 V, 61 mOhm Typ, 39 A MDmesh M6 Power MOSFET, TO-247 Package
ST
TO-220-3
50000
N-Channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET, TO-220FP Package
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