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BGA5M1BN6E6328XTSA1 - 18dB High Gain Low Noise Amplifier for LTE Midband

Part Number: BGA5M1BN6E6328XTSA1

Package: TSNP-6

Type: Low Noise Amplifiers

Detailed Description: RF Amplifier IC 18dB High Gain Low Noise Amplifier for LTE Midband

Product Overviews

BGA5M1BN6E6328XTSA1 is a front-end low noise amplifier for LTE which covers a wide frequency range from 1805 MHz to 2200 MHz. The LNA provides 19.3 dB gain and 0.65 dB noise figure at a current consumption of 9.5mA. In bypass mode the LNA provides an insertion loss of 4.7 dB.

The BGA5M1BN6 is based upon Infineon Technologies‘ B9HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage. The device features a single-line two-state control (Bypass- and High gain-Mode). OFF-state can be enabled by powering down VCC.

Product Features

Insertion power gain: 19.3 dB

Insertion loss in bypass mode: 4.7 dB

Low noise figure: 0.65 dB

Low current consumption: 9.5mA

Operating frequencies: 1805 - 2200 MHz

Multi-state control: bypass- and high gain-mode

Supply voltage: 1.5 V to 3.6 V

Ultra small TSNP-6-2 and TSNP-6-10 leadless package (footprint: 0.7 x 1.1 mm2)

B9HF Silicon Germanium technology

RF output internally matched to 50 Ohm

Low external component count

2kV HBM ESD protection (including AI-pin)

Pb-free (RoHS compliant) package

Applications

Automotive telematics control unit (TCU)

Mobile devices and smartphones

Wired Communication

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