sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:INFINEON
Particular Year:25+
Package:TSDSON-8
Delivery Date:New and original
Stock: 2000pcs
BSZ011NE2LS5I is an OptiMOS™ 5 power MOSFET launched by Infineon. It is designed to meet the requirements of enhancing system efficiency while reducing system costs. Compared with other alternative devices, the RDS(on) and quality factor (RDS(on) x Qg) of this device are lower. The following are its core features:
Excellent on-resistance
Compliant switch performance (low quality factor Ron x Qg and Ron x Qgd)
Compliant with RoHS standards and halogen-free
Optimized EMI performance (integrated damping network)
High efficiency
High Power density packaged with S3O8 or Power Block modules
The overall system cost has been reduced
Operate at a high switching frequency
Performance parameters of BSZ011NE2LS5I
FET type: N-channel
Technology: MOSFET (Metal Oxide)
Drain-source voltage (Vdss) : 25 V
Current at 25°C - continuous drain (Id) : 35A (Ta), 40A (Tc)
Drive voltage (maximum Rds On, minimum Rds On) : 4.5V, 10V
On-resistance (maximum value) at different ids and Vgs: 1.1 milliohms @ 20A, 10V
Vgs(th) (maximum value) at different ids: 2V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) : 50 nC @ 10 V
Vgs (maximum value) : ±16V
Input capacitance (Ciss) at different Vds (maximum value) : 3400 pF @ 12 V
FET function: -
Power dissipation (maximum) : 2.1W (Ta), 69W (Tc)
Operating temperature: -55°C to 150°C (TJ)
Installation type: Surface mount type
Supplier device packaging: PG-TSDSON-8
Application field
Desktop and server r
Single-phase and multi-phase PoL
CPU/GPU voltage regulation in laptops
High power density voltage regulator
O-ring
Electronic fuse
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