sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:STB33N60DM2
Brand:ST
Particular Year:23+
Package:D2PAK
Delivery Date:New and original
Stock: 2000pcs
The STB33N60DM2 MDmesh™ DM2 Power MOSFETs are MOSFETs with fast recovery diodes optimized for full-bridge phase-shifted ZVS topology. This 600 V power MOSFET features ultra-low reverse recovery charge and time (Qrr, Trr) with a 40% reduction in R DS (on) compared to the previous generation.
Product attribute
FET type: N channel
Technology: MOSFET (Metal oxide)
Drain-source voltage (Vdss) : 600 V
Current at 25°C - Continuous Drain (Id) : 24A (Tc)
Drive voltage (Max Rds On, min Rds On) : 10V
On-resistance (Max.) at different ids and Vgs: 130 milliohm @ 12A, 10V
Vgs(th) (Max.) for different ids: 5V@250µA
Gate charge (Qg) at different Vgs (Max.) : 43 NC-@10 V
Vgs (Max.) : ±25V
Input capacitance (Ciss) at different Vds (Max.) : 1870 PF-@100 V
FET function: -
Power dissipation (Max.) : 190W (Tc)
Operating temperature: -55°C ~ 150°C (TJ)
Mounting type: Surface mount type
Supplier Device Package: TO-263 (D2PAK)
Package/housing: TO-263-3, D2PAK (2 leads + flaps), TO-263AB
Model
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Quantity
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