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STB120NF10T4 is an N-channel enhancement-mode power MOSFET launched by STMicroelectronics, belonging to the STripFET™ II series, using TO-263-3 (D2PAK) packaging, suitable for high-current, high-voltage applications. This device features low on-resistance and high switching speed, and is widely used in power management, motor drive, industrial control and other fields.

STB120NF10T4 Product Attributes

Product Type: MOSFET    

Technology: Si    

Mounting Style: SMD/SMT    

Package/Case: D2PAK-3 (TO-263-3)    

Transistor Polarity: N-Channel    

Number of Channels: 1 Channel    

Vds - Drain-Source Breakdown Voltage: 100 V

Id - Continuous Drain Current: 110 A

Rds On - Drain-Source On-Resistance: 10.5 mOhms

Vgs - Gate-Source Voltage: -20 V, +20 V

Vgs th - Gate-Source Threshold Voltage: 2 V

Qg - Gate Charge: 172 nC

Minimum operating temperature: -55°C

Maximum operating temperature: +175°C

Power dissipation (Pd): 312 W

Channel mode: Enhancement

STB120NF10T4 Key Features

Low on-resistance: 10.5 mΩ @ 60 A, 10 V, reducing conduction losses and improving efficiency.

High current carrying capacity: 110 A continuous current, suitable for high-power switching applications.  

Fast switching performance: Rise time 90 ns, fall time 68 ns, optimising PWM control efficiency.  

Industrial-grade reliability: 100% avalanche testing ensures device stability under high-voltage transients.  

Compliant with RoHS standards, lead-free packaging, suitable for environmentally stringent applications.

• 1.Is the inventory and price seen on the platform accurate?

  A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.

• 2.Are all our products genuine?

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• 6.Can the company issue an invoice?

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