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The IPD70R600P7S is a high-performance N-channel power MOSFET belonging to the CoolMOS™ P7 series in a TO-252-3 (DPAK) package for high-voltage, high-frequency switching applications such as power adapters, chargers, industrial power supplies, and motor drives.

IPD70R600P7S Core Features

High withstand voltage and low on-resistance

600V breakdown voltage (VDSS) for high voltage applications.

7mΩ Ultra-low on-resistance (RDS(on) @10V) for reduced power loss and improved efficiency.

High-speed switching performance

Low gate charge (Qg = 120nC) for optimised switching speed and reduced switching losses.

Optimised Eon/Eoff energy for high frequency PWM control circuits.

Excellent thermal performance

Junction temperature range of -55°C ~ +175°C for harsh operating environments.

Low thermal resistance (RthJC = 2.9 K/W) for improved thermal efficiency.

Integrated Protection

Built-in Zener diode for enhanced ESD protection (HBM Level 2).

Optimised VGS(th) = 3V ±0.5V to ensure stable driving.

IPD70R600P7S Product Attributes

Series: CoolMOS™ P7  

FET Type: N-Channel  

Technology: MOSFET (Metal Oxide)  

Drain-Source Voltage (Vdss): 700 V  

Current at 25°C - Continuous Drain (Id): 8.5A (Tc)  

Drive voltage (max. Rds On, min. Rds On) : 10V  

On-resistance (max) at different Id, Vgs: 600 mOhm @ 1.8A, 10V  

Vgs(th) at different Id (max): 3.5V @ 90µA  

Gate Charge (Qg) (Max) at Vgs: 10.5 nC @ 10 V  

Vgs (max): ±16V  

Input capacitance (Ciss) at different Vds (max): 364 pF @ 400 V  

Power Dissipation (Max): 43W (Tc)  

Operating Temperature: -40°C ~ 150°C (TJ)  

Mounting Type: Surface Mount  

Supplier Package: PG-TO252-3 

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