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STL26N60DM6 N-channel power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared to the previous MDmesh Fast Generation, DM6 combines significantly lower recovery charge (Qrr), recovery time (trr), and unit area RDS (on) improvements, as well as one of the most efficient switching behaviors on the market, making it suitable for the most demanding high-efficiency bridge topologies and ZVS phase shifting converters.

STL26N60DM6 All unctions

Fast recovery body diode

Compared to the previous generation, the RDS (enabled) in each region is lower

Low gate charge, input capacitance, and resistance

100% avalanche test

Extremely high dv/dt rigidity

Zener protection

STL26N60DM6 Product Attributes

Product type: MOSFET

Package/enclosure: PowerFLAT-8x8-5

Transistor polarity: N-Channel

Number of channels: 1 channel

Vds drain source breakdown voltage: 600 V

Id continuous drain current: 15 A

Rds On drain source on resistance: 215 mOhms

Vgs - Gate Source Voltage: -25 V,+25 V

Vgs th gate source threshold voltage: 3.25 V

QG gate charge: 24 nC

Minimum operating temperature: -55 ° C

Maximum operating temperature:+150 ° C

Pd power dissipation: 110 W

Channel mode: Enhancement

Trademark Name: MDmesh

Encapsulation: Reel

Configuration: Single

Descent time: 8 ns

Humidity sensitivity: Yes

Product type: MOSFETs

Rise time: 11 ns

Series: STx26

Transistor type: 1 N-Channel

Typical shutdown delay time: 39 ns

Typical connection delay time: 13 ns

STL26N60DM6 Application

• Switch applications

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