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Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:INFINEON
Particular Year:20+
Package:PG-TO247
Delivery Date:New and Original
Stock: 18000pcs
SPW35N60C3 is an N-channel power MOSFET launched by Infineon, belonging to the CoolMOS™ C3 series. This series of devices is renowned for its low on-resistance, high power density, and high efficiency, making it suitable for a wide range of high-voltage switching applications.
SPW35N60C3 Product Features
High voltage withstand and high current: The drain-source voltage (Vdss) is 650V, and the continuous drain current (Id) is 34.6A at 25°C, enabling it to withstand high voltages and currents, making it suitable for high-voltage power conversion applications.
Low on-resistance: At a gate-source voltage of 10V, the maximum on-resistance (RDS(on)) is 100mΩ@21.9A, helping to reduce power loss and improve system efficiency.
Low gate charge and low input capacitance: The gate charge (Qg) is 200nC@10V, and the input capacitance (Ciss) is 4500pF@25V, which reduces drive losses and improves switching speed.
High power dissipation: The maximum power dissipation (Pd) is 313W, meeting the requirements of high-power applications.
Wide operating temperature range: The operating temperature range is -55°C to +150°C, suitable for various harsh environmental conditions.
SPW35N60C3 Product Attributes
Product Type: MOSFET
Mounting Style: Through Hole
Package/Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 34.6 A
Rds On - Drain-Source On-Resistance: 100 mOhms
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 2.1 V
Qg - Gate charge: 150 nC
Minimum operating temperature: -55°C
Maximum operating temperature: +150°C
Pd - Power dissipation: 313 W
Channel mode: Enhancement
Trademark name: CoolMOS
SPW35N60C3 Typical applications
Power conversion: DC-DC converters, switching power supplies (SMPS), inverters.
Motor drive: Industrial motors, electric vehicle controllers.
Automotive electronics: On-board chargers (OBC), battery management systems (BMS).
Industrial equipment: Welding machines, UPS power supplies, solar inverters.
Model
Brand
Package
Quantity
Describe
ST
TO-263
32000
N-channel 100 V, 9 mOhm typical, 110 A STripFET II power MOSFET, D2PAK package
ST
PowerFLAT 8x8
3000
N-channel 600 V, 175 mOhm typical value, 15 A MDmesh DM6 power MOSFET, PowerFLAT 8x8 HV package
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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