sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:INFINEON
Particular Year:21+
Package:PG-TO252-3
Delivery Date:New and Original
Stock: 50000pcs
The IPD70R360P7S is an N-channel power MOSFET developed by Infineon, based on advanced Trench MOSFET technology and incorporating 700V CoolMOS™ P7 super-junction technology. It features ultra-low on-resistance and fast switching characteristics, specifically designed for high-efficiency power conversion applications. This product is widely applicable in switch-mode power supplies, motor drives, DC-DC converters, and other fields, significantly enhancing system efficiency and power density.
Technical Specifications — IPD70R360P7S
Drain-source voltage: 700V
Continuous drain current: 12.5A
On-resistance: 360mΩ @ 10V, 3A
Gate charge: 8.5nC
Input capacitance: 517pF
Operating temperature range: -40°C to +150°C
Package Type: TO-252-3
Product Features — IPD70R360P7S
Low On-Resistance: Extremely low on-resistance reduces power loss and improves system efficiency.
• Fast Switching Speed: Suitable for high-frequency operating environments, helping to reduce the size of magnetic components and achieve higher power density.
• High voltage withstand capability: 700V voltage withstand, ensuring reliability in high-voltage applications.
• Excellent thermal performance: Optimised package design for effective heat dissipation, ensuring device stability during high-power operation.
• Integrated protection functionality: Built-in integrated protection Zener diode enhances the device's resistance to transient overvoltage.
Advantages — IPD70R360P7S
• Cost-competitive technology
• Lower temperature
• Higher electrostatic discharge (ESD) tolerance
• Improved efficiency at higher switching frequencies
• Supports high power density designs and miniaturised structures
Potential applications —IPD70R360P7S
• Recommended for flyback topology structures, such as chargers, adapters, lighting applications, etc.
Model
Brand
Package
Quantity
Describe
ST
TO-263
32000
N-channel 100 V, 9 mOhm typical, 110 A STripFET II power MOSFET, D2PAK package
ST
PowerFLAT 8x8
3000
N-channel 600 V, 175 mOhm typical value, 15 A MDmesh DM6 power MOSFET, PowerFLAT 8x8 HV package
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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