sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:INFINEON
Particular Year:22+
Package:PG-TO252-3
Delivery Date:New and Original
Stock: 30000pcs
The IRF1310NPBF is a 100V single N-channel power MOSFET in a TO-220 package.
Features - IRF1310NPBF
Planar cell structure for wide SOA
Optimised for widest availability from distribution partners
JEDEC-compliant products
Silicon optimised for applications with switching frequencies below 100kHz
Industry standard surface mount power supply package
High current rating
Benefits - IRF1310NPBF
More rugged
Wide range of distribution partner offerings
Meets industry standards
High performance in low frequency applications
Direct replacement for existing equipment
High current capability
Specification - IRF1310NPBF
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss): 100 V
Current at 25°C - Continuous Drain (Id) : 42A (Tc)
Drive voltage (max. Rds On, min. Rds On): 10V
On-resistance (max) at different Id, Vgs: 36 mOhm @ 22A, 10V
Vgs(th) at different Id (max): 4V @ 250µA
Gate Charge (Qg) (Max) at Vgs: 110 nC @ 10 V
Vgs (max): ±20V
Input capacitance (Ciss) at different Vds (max): 1900 pF @ 25 V
Power Dissipation (Max): 160W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package/Housing: TO-220-3
Model
Brand
Package
Quantity
Describe
INFINEON
PG-TO263-3
5000
Surface Mount Type N-Channel 150 V 100 A (Tc) 300 W (Tc) PG-TO263-3
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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