sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:INFINEON
Particular Year:22+
Package:PG-TO252-3
Delivery Date:New and Original
Stock: 30000pcs
The IRF1310NPBF is a 100V single N-channel power MOSFET in a TO-220 package.
Features - IRF1310NPBF
Planar cell structure for wide SOA
Optimised for widest availability from distribution partners
JEDEC-compliant products
Silicon optimised for applications with switching frequencies below 100kHz
Industry standard surface mount power supply package
High current rating
Benefits - IRF1310NPBF
More rugged
Wide range of distribution partner offerings
Meets industry standards
High performance in low frequency applications
Direct replacement for existing equipment
High current capability
Specification - IRF1310NPBF
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss): 100 V
Current at 25°C - Continuous Drain (Id) : 42A (Tc)
Drive voltage (max. Rds On, min. Rds On): 10V
On-resistance (max) at different Id, Vgs: 36 mOhm @ 22A, 10V
Vgs(th) at different Id (max): 4V @ 250µA
Gate Charge (Qg) (Max) at Vgs: 110 nC @ 10 V
Vgs (max): ±20V
Input capacitance (Ciss) at different Vds (max): 1900 pF @ 25 V
Power Dissipation (Max): 160W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package/Housing: TO-220-3
Model
Brand
Package
Quantity
Describe
ST
PowerFLAT 8x8
3000
N-channel 600 V, 175 mOhm typical value, 15 A MDmesh DM6 power MOSFET, PowerFLAT 8x8 HV package
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