sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:LMG1210RVRR
Data Manual:LMG1210RVRR.pdf
Brand:TI
Particular Year:23+
Package:WQFN-19
Delivery Date:New and Original
Stock: 8000pcs
The LMG1210RVRR is a 200V half-bridge MOSFET and gallium nitride field effect transistor (GaN FET) driver developed for applications requiring ultra-high frequency and high efficiency, with an adjustable dead-time function, very short propagation delay, and 3.4ns high-side/low-side matching to optimise system efficiency. The part also features an internal LDO that ensures a 5V gate drive voltage independent of supply voltage.
Product Features
• Up to 50-MHz operation
• 10-ns typical propagation delay
• 3.4-ns high-side to low-side matching
• Minimum pulse width of 4 ns
• Two control input options
– Single PWM input with adjustable dead time
– Independent input mode
• 1.5-A peak source and 3-A peak sink currents
• External bootstrap diode for flexibility
• Internal LDO for adaptability to voltage rails
• High 300-V/ns CMTI
• HO to LO capacitance less than 1 pF
• UVLO and overtemperature protection
• Low-inductance WQFN package
Product Applications
• High-speed DC-DC converters
• RF envelope tracking
• Class-D audio amplifiers
• Class-E wireless charging
• High-precision motor control
Model
Brand
Package
Quantity
Describe
ST
PowerSSO-24
26000
Dual-channel high-side driver supporting analogue current sensing for automotive applications
ST
PowerSSO-16
20000
High-side driver with MultiSense analogue feedback for automotive applications
TI
VSON-8
15000
3A, 120V Half Bridge Gate Driver with 8V UVLO and Negative Voltage Handling Capability
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Texas Instruments (TI), abbreviated as TI, is the worlds leading semiconductor company providing innovative digital signal processing (DSP) and analog device technologies for real-world signal processing. In addition to the semiconductor business, it …
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