sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:STGD19N40LZ
Data Manual:STGD19N40LZ.pdf
Brand:ST
Particular Year:23+
Package:TO-252-3
Delivery Date:New and Original
Stock: 1000pcs
The STGD19N40LZ features state-of-the-art PowerMESH™ technology. A Zener diode between the gate collector and gate emitter provides overvoltage protection. The device also features low on-state voltage drop and low threshold drive for automotive ignition systems.
Product Attributes
Voltage - Collector Breakdown (Max): 390 V
Current - Collector (Ic) (max): 25 A
Current - collector pulse (Icm): 40 A
Vce(on) at varying Vge, Ic (max): 1.5V @ 4.5V, 10A
Power - max: 125 W
Switching Energy: -
Input Type: Logic
Gate Charge: 17 nC
Td (On/Off) Value at 25°C: 650ns/13.5µs
Test Conditions: 300V, 10A, 1 kOhm, 5V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package/Housing: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Applications
• Pencil coil electronic ignition drivers
Model
Brand
Package
Quantity
Describe
ST
D2PAK-3
5000
Insulated Gate Bipolar Transistors (IGBTs) 20 A - 600 V - short circuit rugged IGBTs
INFINEON
PG-TO220-3
5000
600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package
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