sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IGBT Transistor
Brand:ST
Particular Year:25+
Package:TO-247
Delivery Date:New and Original
Stock: 5000pcs
The STGW80H65DFB is an N-channel, 650V, 80A high-speed trench gate field stop (FS) HB series IGBT for multiple power conversion applications. It adopts advanced trench gate field stop technology and features low saturation voltage, high switching speed, low switching loss, etc., which can effectively improve the efficiency and performance of the system, and the package is TO-247.
Features
Maximum Junction Temperature: TJ = 175 °C
High-speed switching series
Lowest tail current
Low saturation voltage: VCE(sat) = 1.6 V (typical) @ IC = 80 A
Tight parameter distribution
Safe parallel connection
Positive VCE (saturation) temperature coefficient
Low thermal resistance
Very fast soft recovery reverse parallel diode
Specification
IGBT Type: Trench Field Cutoff
Voltage - Collector Breakdown (max): 650 V
Current - Collector (Ic) (max): 120 A
Current - Collector Pulse (Icm): 240 A
Vce(on) (max) at different Vge, Ic: 2V @ 15V, 80A
Power - Max: 469 W
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Input Type: Standard
Gate Charge: 414 nC
Td (on/off) value at 25°C: 84ns/280ns
Test Conditions: 400V, 80A, 10 Ohm, 15V
Reverse Recovery Time (trr): 85 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package/Housing: TO-247-3
Supplier Device Package: TO-247
Applications
Photovoltaic inverters
High frequency converters
Model
Brand
Package
Quantity
Describe
ST
D2PAK-3
5000
Insulated Gate Bipolar Transistors (IGBTs) 20 A - 600 V - short circuit rugged IGBTs
INFINEON
PG-TO220-3
5000
600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package
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