sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IGBT Transistor
Brand:INFINEON
Particular Year:24+
Package:TO-247-3
Delivery Date:New and Original
Stock: 8000pcs
IKW40N65H5 High Speed 650 V, 40 A Hard Switching TRENCHSTOPTM IGBT5 co-packaged with a RAPID 1 fast soft reverse parallel diode in a TO-247 package is defined as a ‘best in class’ IGBT.
Features and Benefits:
High-speed H5 technology provides
Highest efficiency in hard-switched and resonant topologies
Plug-in replacement for previous generation IGBTs
650V breakdown voltage
Low threshold charging QG
IGBTs in RAPID1 fast and soft parallel diode packages
Maximum junction temperature 175°C
JEDEC certified for targeted applications
Lead-free plating; RoHS compliant
Product Specifications:
Product Category: Insulated Gate Bipolar Transistors (IGBTs)
Technology: Si
Package / Case: TO-247-3
Mounting Style: Through Hole
Configuration: Single
Collector-emitter maximum voltage VCEO: 650 V
Collector-emitter saturation voltage: 1.65 V
Gate/Emitter Maximum Voltage: - 20 V, 20 V
Continuous collector current at 25 C: 74 A
Pd-power dissipation: 250 W
Minimum operating temperature: - 40 C
Maximum operating temperature: + 175 C
Series: TRENCHSTOP 5 H5
Gate-emitter leakage current: 100 nA
Trade name: TRENCHSTOP
Applications:
Solar energy converters
Uninterruptible Power Supplies
Welding converters
Medium and high frequency switching inverters
Model
Brand
Package
Quantity
Describe
ST
D2PAK
5000
Trench gate field-stop 650 V, 30 A low-loss M series IGBT in a D²PAK package
IXYS
TO-220-3
5000
650V, Auroral Transmission IGBT Transistor for 20-60kHz Switching, TO-220-3
IXYS
TO-247-3
5000
900V, 165A, High Speed IGBT Transistor for 20-50 kHz Switching, TO-247-3
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