sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IGBT Transistor
Brand:INFINEON
Particular Year:24+
Package:TO-247-3
Delivery Date:New and Original
Stock: 8000pcs
IKW40N65H5 High Speed 650 V, 40 A Hard Switching TRENCHSTOPTM IGBT5 co-packaged with a RAPID 1 fast soft reverse parallel diode in a TO-247 package is defined as a ‘best in class’ IGBT.
Features and Benefits:
High-speed H5 technology provides
Highest efficiency in hard-switched and resonant topologies
Plug-in replacement for previous generation IGBTs
650V breakdown voltage
Low threshold charging QG
IGBTs in RAPID1 fast and soft parallel diode packages
Maximum junction temperature 175°C
JEDEC certified for targeted applications
Lead-free plating; RoHS compliant
Product Specifications:
Product Category: Insulated Gate Bipolar Transistors (IGBTs)
Technology: Si
Package / Case: TO-247-3
Mounting Style: Through Hole
Configuration: Single
Collector-emitter maximum voltage VCEO: 650 V
Collector-emitter saturation voltage: 1.65 V
Gate/Emitter Maximum Voltage: - 20 V, 20 V
Continuous collector current at 25 C: 74 A
Pd-power dissipation: 250 W
Minimum operating temperature: - 40 C
Maximum operating temperature: + 175 C
Series: TRENCHSTOP 5 H5
Gate-emitter leakage current: 100 nA
Trade name: TRENCHSTOP
Applications:
Solar energy converters
Uninterruptible Power Supplies
Welding converters
Medium and high frequency switching inverters
Model
Brand
Package
Quantity
Describe
ST
D2PAK-3
5000
Insulated Gate Bipolar Transistors (IGBTs) 20 A - 600 V - short circuit rugged IGBTs
INFINEON
PG-TO220-3
5000
600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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