sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IGBT Transistor
Brand:ON
Particular Year:25+
Package:TO-247-4
Delivery Date:New and Original
Stock: 5000pcs
The FGY4L100T120SWD features novel field-stopped Gen 7 IGBT technology and Gen 7 diodes in a TO247 4-lead package for optimal performance with low switching and conduction losses for efficient operation in a wide variety of applications such as solar inverters, UPS and ESS.
FGY4L100T120SWD Specifications:
Product Category: Insulated Gate Bipolar Transistor (IGBT)
Technology: Si
Package/Case: TO-247-4
Mounting Style: Through Hole
Configuration: Single
Maximum Collector-Emitter Voltage VCEO: 1.2 kV
Collector-Emitter Saturation Voltage: 1.2 kV Collector -Emitter saturation voltage: 1.7 V
Gate/emitter max. voltage: 20 V
Continuous collector current at 25 C: 200 A
Pd-power dissipation: 1.071 kW
Min. operating temperature: - 55 °C
Max. operating temperature: + 175 °C
FGY4L100T120SWD Features:
Maximum junction temperature TJ = 175 °C
Positive temperature coefficient
High current capability
Smooth optimised switching
Low switching losses
FGY4L100T120SWD Applications:
Solar inverters
UPS
Energy storage systems
Model
Brand
Package
Quantity
Describe
ST
D2PAK
5000
Trench gate field-stop 650 V, 30 A low-loss M series IGBT in a D²PAK package
IXYS
TO-220-3
5000
650V, Auroral Transmission IGBT Transistor for 20-60kHz Switching, TO-220-3
IXYS
TO-247-3
5000
900V, 165A, High Speed IGBT Transistor for 20-50 kHz Switching, TO-247-3
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