sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:STGB10NB40LZT4
Data Manual:STGB10NB40LZT4.pdf
Brand:ST
Particular Year:23+
Package:TO-263-3
Delivery Date:New and Original
Stock: 1000pcs
STGB10NB40LZT4 uses the latest high-voltage technology based on a patented ribbon layout STMicroelectronics uses the latest high-voltage technology based on a patented ribbon layout to design an advanced IGBT family, PowerMESH performance. The built-in collector zener shows very accurate active clamping, while the gate-emitter zener gate-emitter zener provides ESD protection.
Product Attributes
Voltage - Collector Breakdown (max): 440 V
Current - Collector (Ic) (max): 20 A
Current - Collector Pulse (Icm): 40 A
Vce(on) at varying Vge, Ic (max): 1.8V @ 4.5V, 10A
Power - Max: 150 W
Switching Energy: 2.4mJ (on), 5mJ (off)
Input Type: Standard
Gate Charge: 28 nC
Td (on/off) value at 25°C: 1.3µs/8µs
Test Conditions: 328V, 10A, 1 kOhm, 5V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package/Housing: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Applications
• Switching Applications
Model
Brand
Package
Quantity
Describe
IXYS
TO-220-3
5000
650V, Auroral Transmission IGBT Transistor for 20-60kHz Switching, TO-220-3
IXYS
TO-247-3
5000
900V, 165A, High Speed IGBT Transistor for 20-50 kHz Switching, TO-247-3
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The STMicroelectronics (ST) Group was established in 1987 by the merger of Italys SGS Microelectronics and Frances Thomson Semiconductor. In May 1998, SGS-THOMSON Microelectronics changed the company name to STMicroelectronics Limited. STMicroelectron…
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