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The IR2304STRPBF is a high-performance half-bridge gate driver IC in an 8-SOIC package, designed for driving and controlling MOSFETs and IGBTs. It is widely used in power conversion, motor drive, LED lighting, and industrial automation applications.

IR2304STRPBF — Key Features

High-speed drive capability

Rise time (tr): 25 ns (typical), fall time (tf): 20 ns (typical), suitable for high-frequency switching applications.

Peak drive current: 1 A (sink current) / 1.3 A (source current), capable of quickly driving high-power MOSFETs/IGBTs.

Enhanced protection features

Undervoltage lockout (UVLO): Prevents MOSFETs from being accidentally triggered at low voltages.

Over-Temperature Protection (OTP): Limits drive current when chip temperature is too high to prevent damage.  

Reverse Battery Protection: Prevents device damage caused by reverse polarity power supply connection.  

Flexible Control Options  

Adjustable Dead-Time (td): Set via external resistor to prevent simultaneous conduction of upper and lower bridge arm MOSFETs.  

Compatible with Multiple Logic Levels: Supports 3.3V, 5V, and 15V input logic.  

High Reliability Design

Floating channel design: Supports bootstrap drive, capable of withstanding up to 600V high-side voltage.

Strong noise immunity: Low di/dt drive reduces the impact of switching noise.

IR2304STRPBF — Key Parameters

Supply voltage (Vcc): 10V to 20V

Peak output current: 1A (sink) / 1.3A (source)

Rise/fall time: 25ns / 20ns (typical)

Dead time: Adjustable (via external resistor)

Operating temperature: -40°C to +150°C (TJ)    

Package: 8-SOIC (3.9mm × 4.9mm)    Surface mount

RoHS compliance: Compliant (lead-free)

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