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The IRS2110SPBF is a high-voltage, high-speed power MOSFET and IGBT driver with independent high-voltage side and low-voltage side reference output channels. Proprietary HVIC and latch-up immune CMOS technologies enable rugged monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs with logic voltages as low as 3.3 V. Output drivers feature high pulse current buffer stages designed to minimise driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive N-channel power MOSFETs or IGBTs in high voltage side configurations with operating voltages up to 500 V or 600 V. The outputs are designed to minimise driver cross-conduction.

IRS2110SPBF Product Attributes

Drive Configuration: Half Bridge  

Channel Type: Freestanding  

Number of drivers: 2  

Gate Type: IGBT, N-Channel MOSFET  

Voltage - Supply: 10V ~ 20V  

Logic Voltage: - VIL, VIH 6V, 9.5V  

Current - Peak Output (Pour In, Pull Out): 2.5A, 2.5A  

Input Type: Non-Inverting  

High Side Voltage - Maximum (Bootstrap): 500 V  

Rise/Fall Time (typical): 25ns, 17ns  

Operating Temperature: -40°C ~ 150°C (TJ)  

Mounting Type: Surface Mount  

Package/Shell: 16-SOIC (0.295’, 7.50mm Width)  

Supplier Device Package: 16-SOIC 

IRS2110SPBF Features

Floating gate driver designed for bootstrap operation

Operating voltages up to +500 V

Full operating voltage up to +600 V optional (IRS2113 )

Withstands negative transient voltages, dV/dt unaffected

Gate driver supply range of 10 V to 20 V

Dual undervoltage lockout

Compatible with 3.3 V logic

Independent logic supply range of 3.3 V to 20 V

Dual-channel propagation delay matching

Logic and supply ground +/- 5 V offset

CMOS Schmitt trigger inputs with pull-downs

Cycle-by-cycle edge-triggered shutdown logic

Outputs in phase with inputs

IRS2110SPBF Applications

Light Duty Electric Vehicles (LEV)

Motor control

Photovoltaics

Power conversion

Power tools

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