sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:INFINEON
Particular Year:24+
Package:PG-WHTFN-9
Delivery Date:New and Original
Stock: 1680pcs
The power MOSFET IQD016N08NM5CGSC features a low RDS(on) of 1.57 mOhm and excellent thermal performance for easy power loss management. The centre gate footprint is optimised for parallelisation. In addition, the double-sided cooled package dissipates five times more power compared to an overmolded package.
IQD016N08NM5CGSC Features
State-of-the-art 80 V silicon technology
Outstanding FOM
Improved thermal performance
Ultra-low parasitics
Maximised chip/package ratio
Centre gate footprint
Industry standard package
IQD016N08NM5CGSC Benefits
Best switching performance
Minimised conduction losses
Fast switching
Reduced voltage overshoot
Increased maximum current capability
Fewer devices in parallel
Lowest RDS(on) on a 5x6 footprint
Easy thermal management
IQD016N08NM5CGSC Applications
Low voltage drives
Power tools
Power supplies
Server power supplies
Automotive Battery Management Systems (BMS)
Model
Brand
Package
Quantity
Describe
INFINEON
PG-WHTFN-9
1680
N Channel 100 V 26A (Ta), 276A (Tc) 3W (Ta), 333W (Tc) PG-WHTFN-9-U02
INFINEON
PG-WHSON-8
1680
N Channel 100 V 26A (Ta), 276A (Tc) 3W (Ta), 333W (Tc) PG-WHSON-8-U02
INFINEON
PG-WHSON-8
1680
OptiMOS™ power MOSFETs 80 V in PQFN 5x6 Source-Down DSC package with very low RDS(on).
INFINEON
PG-WHSON-8
1680
N Channel 60 V 42A (Ta), 445A (Tc) 3W (Ta), 333W (Tc) PG-WHSON-8-U02
INFINEON
PG-WHTFN-9
1680
OptiMOS™ power MOSFETs 60 V in PQFN 5x6 Source-Down Center-Gate DSC package with industry-leading RDS(on)
INFINEON
PG-WHTFN-9
1680
N Channel 60 V 42A (Ta), 445A (Tc) 3W (Ta), 333W (Tc) PG-WHTFN-9-U02
INFINEON
PG-WHSON-8
1680
OptiMOS™ power MOSFETs 60 V in PQFN 5x6 Source-Down DSC package with industry-leading RDS(on).
INFINEON
PG-WHTFN-9
1000
OptiMOS™ Power MOSFET 40 V Normal Level in PQFN 5x6 Lower Source Centre Gate DSC Package
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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