sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:ST
Particular Year:25+
Package:TO-247
Delivery Date:New and Original
Stock: 12000pcs
The STW3N150 is an N-channel power MOSFET from STMicroelectronics, packaged in a TO-247-3 package, and part of the MDmesh™ series, suitable for high-voltage, high-power applications. The device is made from Si semiconductor material, featuring a 1500V drain-source voltage (Vdss) and a 2.5A continuous drain current (Id), making it ideal for power management, industrial control, and motor drive applications.
Key Parameters
Product Model: STW3N150
Drain-Source Voltage (Vdss): 1500V
Continuous Drain Current (Id): 2.5A (Tc=25°C)
On-resistance (RDS(on)): 9Ω @ 1.3A, 10V
Gate threshold voltage (VGS(th)): 3–5V
Maximum power dissipation (PD): 140W (Tc)
Input capacitance (Ciss): 939pF @ 25V
Gate charge (Qg): 29.3 nC @ 10 V
Operating temperature range: -50°C to +150°C
Package: TO-247-3
Key Features
High voltage rating: 1500V drain-source voltage, suitable for high-voltage power conversion and inverter applications.
Low on-resistance: 9Ω @ 1.3A, reducing power loss and improving efficiency.
Fast switching: Input capacitance 939pF, gate charge 29.3nC, optimising high-frequency switching performance.
High reliability: Compliant with RoHS standards, suitable for industrial and automotive applications.
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The STMicroelectronics (ST) Group was established in 1987 by the merger of Italys SGS Microelectronics and Frances Thomson Semiconductor. In May 1998, SGS-THOMSON Microelectronics changed the company name to STMicroelectronics Limited. STMicroelectron…
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