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BSC052N08NS5 is an N-channel power MOSFET in a TDSON-8 package, part of the OptiMOS™ 5 series. This device is specifically designed for efficient power conversion and is suitable for applications such as server power supplies, communication equipment, solar inverters, low-voltage drives, and adapters. Its optimised low on-resistance (RDS(on)) and high switching frequency characteristics significantly enhance system efficiency and reduce power consumption.

Key Features

Low on-resistance (RDS(on))

5.2mΩ @ VGS=10V, ID=47.5A, reducing conduction losses.

Compared to the previous generation, RDS(on) is reduced by up to 43%, improving power density.

Continuous drain current (ID): 95A  

Pulse drain current (IDM): 380A, suitable for high transient loads.  

Rise time: 7ns  

Fall time: 5ns, reducing switching losses.  

Low thermal resistance package (TDSON-8), improving heat dissipation efficiency.  

Operating temperature range: -55°C to +150°C, suitable for harsh environments.

Low gate charge (Qg) 32nC @ VGS=10V, reducing drive losses and improving efficiency.

Key parameters  

Model: BSC052N08NS5  

Drain-source voltage (VDS):    80 V  

Continuous drain current (ID):    95 A  

On-resistance (RDS(on)):    5.2 mΩ (@10 V, 47.5 A)

Gate charge (Qg): 32 nC (@10V)  

Input capacitance (Ciss): 2.9nF (@40V)  

Switching frequency: 100kHz  

Package: TDSON-8  

Potential Applications  

Communications  

Servers  

Solar  

Low-voltage drivers  

Light electric vehicles  

Adapters

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• 6.Can the company issue an invoice?

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