sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:INFINEON
Particular Year:19+
Package:PG-TSDSON-8
Delivery Date:New and Original
Stock: 5000pcs
The BSZ520N15NS3G is an N-channel power MOSFET from Infineon, part of the OptiMOS™ 3 series, packaged in a TDSON-8 package (3.3×3.3mm), suitable for high-efficiency power conversion, motor drive, and automotive electronics applications. This device employs advanced MOSFET technology, featuring low on-resistance (RDS(on)), high switching speed, and excellent thermal performance, significantly enhancing system efficiency while reducing PCB space requirements.
Key Features — BSZ520N15NS3G
Low on-resistance: 20mΩ (typical), effectively reducing conduction losses and improving energy efficiency.
High current capability: 21A continuous drain current (ID), suitable for high-power applications.
Fast switching performance:
Rise time 5ns, fall time 3ns, reducing switching losses.
Low gate charge (Qg=12nC @10V), optimising drive efficiency.
High voltage rating: 150V drain-source voltage (VDS), suitable for 48V-80V systems.
Automotive-grade reliability: Compliant with AEC-Q100 standards, operating temperature range -55°C to +150°C.
Compact packaging: TDSON-8 surface mount, saving PCB space and optimising thermal design.
Key parameters
Model: BSZ520N15NS3G
Package: TDSON-8 (3.3×3.3mm)
Drain-source voltage (VDS): 150V
Continuous drain current (ID): 21A
On-resistance (RDS(on)): 20mΩ (typical)
Gate Charge (Qg): 12 nC @10 V
Input Capacitance (Ciss): 890 pF @75 V
Switching Time: Rise 5 ns / Fall 3 ns
Operating Temperature: -55°C to +150°C
Typical Applications — BSZ520N15NS3G
Power Conversion:
AC-DC SMPS synchronous rectification
DC-DC converter (communication/data centre)
Motor Control:
Power tools, home vehicles (48V system)
Industrial servo drives
Automotive Electronics:
48V mild hybrid system (MHEV)
Battery Management System (BMS)
Consumer Electronics:
Class D audio amplifier
UPS uninterruptible power supply
Product Advantages — BSZ520N15NS3G
High Power Density: Compared to competitors, RDS(on) is reduced by 40%, and FOM (Figure of Merit) is optimised by 45%.
Environmental Design: Complies with RoHS halogen-free standards, suitable for green energy applications.
Simplified Design: Single-chip solution replaces traditional dual MOSFET configurations, reducing BOM costs.
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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