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Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:INFINEON
Particular Year:24+
Package:PG-TO220-3
Delivery Date:New and Original
Stock: 5000pcs
The IPA60R199CP is an N-channel power MOSFET from Infineon, part of the CoolMOS™ CP series, packaged in a TO-220FP (PG-TO-220-FP) package, suitable for high-efficiency power conversion, industrial power systems, and automotive electronics applications. This device employs advanced Super Junction technology, offering low on-resistance (RDS(on)), high switching speed, and excellent thermal performance, significantly enhancing system efficiency while reducing PCB space requirements.
Key Features
High voltage rating: 650V drain-source voltage (VDS), suitable for high-voltage applications such as AC-DC power supplies and solar inverters.
Low on-resistance: 199mΩ (maximum) @10V VGS, reducing conduction losses and improving energy efficiency.
High current capability: 16A continuous drain current (ID) (at 25°C, with case temperature limitation).
Fast switching performance: 5ns rise time, 5ns fall time, optimised for high-frequency switching applications.
Low gate charge (Qg): 32nC @10V, reducing drive losses and compatible with low-power control circuits.
Automotive-grade reliability: operating temperature -55°C to +150°C, compliant with RoHS lead-free standards, suitable for harsh environments.
Technical specifications
Model: IPA60R199CP
Package: TO-220FP (PG-TO-220-FP)
Drain-source voltage (VDS): 650V
Continuous drain current (ID): 16A
Pulse drain current (IDM): 51A
On-resistance (RDS(on)): 199mΩ (maximum) VGS=10V, ID=9.9A
Gate charge (Qg): 32nC VGS=10V
Input capacitance (Ciss): 1520pF VDS=100V
Maximum power dissipation (PD): 34W Tc=25°C
Switching time: Rise 5ns / Fall 5ns
Operating temperature range: -55°C to +150°C
Potential applications
Solar energy
Servers
Communications
Consumer products
Adapters
Computer power supplies
Model
Brand
Package
Quantity
Describe
INFINEON
PG-TO263-3
5000
Surface Mount Type N-Channel 150 V 100 A (Tc) 300 W (Tc) PG-TO263-3
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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