sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:INFINEON
Particular Year:24+
Package:PG-WHTFN-9
Delivery Date:New and Original
Stock: 1680pcs
The power MOSFET IQDH88N06LM5CGSC features a low RDS(on) of 0.86 mOhm and excellent thermal performance for easy power loss management. The centre gate footprint is optimised for parallelisation. In addition, the power dissipation is five times higher in a double-sided cooled package compared to an overmolded package.
Product Characteristics
N-Channel, Logic Level
Very low on-resistance RDS(on)
Excellent thermal resistance
Optimised double-sided cooling design
100% avalanche tested
Lead-free plating; RoHS compliant
Halogen free, IEC 61249-2-21 compliant
IQDH88N06LM5CGSC Surface Mount N-Channel 60 V 42A (Ta), 447A (Tc) 3W (Ta), 333W (Tc) PG-WHTFN-9-U02
Product Specifications
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss): 60 V
Current at 25°C - Continuous Drain (Id): 42A (Ta), 447A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
On Resistance (Max) at Different Id, Vgs: 0.86 mOhm @ 50A, 10V
Vgs(th) at different Id (max): 2.3V @ 163µA
Gate Charge (Qg) at Vgs (max): 95 nC @ 4.5 V
Vgs (max): ±20V
Input capacitance (Ciss) at different Vds (max): 14000 pF @ 30 V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Application Areas
Chargers from 50 kW to 350 kW
Low voltage drives
Power tools
Power supplies
Computing and data storage
Model
Brand
Package
Quantity
Describe
ST
TO-247
12000
N-channel 1500 V, 6 Ohm typical, 2.5 A PowerMESH(TM) power MOSFET, TO-247 package
INFINEON
PG-TO220-3
5000
CoolMOS® Power Transistor Through-Hole N-Channel 650 V 16 A (Tc) 34 W (Tc) PG-TO220-3-31
INFINEON
TO-220
3000
60V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package
INFINEON
PG-TSDSON-8
5000
OptiMOS™3 Power Transistor N-Channel 150 V 21 A (Tc) 57 W (Tc) PG-TSDSON-8
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