sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:INFINEON
Particular Year:24+
Package:PG-WHTFN-9
Delivery Date:New and Original
Stock: 1680pcs
The power MOSFET IQDH88N06LM5CGSC features a low RDS(on) of 0.86 mOhm and excellent thermal performance for easy power loss management. The centre gate footprint is optimised for parallelisation. In addition, the power dissipation is five times higher in a double-sided cooled package compared to an overmolded package.
Product Characteristics
N-Channel, Logic Level
Very low on-resistance RDS(on)
Excellent thermal resistance
Optimised double-sided cooling design
100% avalanche tested
Lead-free plating; RoHS compliant
Halogen free, IEC 61249-2-21 compliant
IQDH88N06LM5CGSC Surface Mount N-Channel 60 V 42A (Ta), 447A (Tc) 3W (Ta), 333W (Tc) PG-WHTFN-9-U02
Product Specifications
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss): 60 V
Current at 25°C - Continuous Drain (Id): 42A (Ta), 447A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
On Resistance (Max) at Different Id, Vgs: 0.86 mOhm @ 50A, 10V
Vgs(th) at different Id (max): 2.3V @ 163µA
Gate Charge (Qg) at Vgs (max): 95 nC @ 4.5 V
Vgs (max): ±20V
Input capacitance (Ciss) at different Vds (max): 14000 pF @ 30 V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Application Areas
Chargers from 50 kW to 350 kW
Low voltage drives
Power tools
Power supplies
Computing and data storage
Model
Brand
Package
Quantity
Describe
INFINEON
PG-WHTFN-9
1680
N Channel 100 V 26A (Ta), 276A (Tc) 3W (Ta), 333W (Tc) PG-WHTFN-9-U02
INFINEON
PG-WHSON-8
1680
N Channel 100 V 26A (Ta), 276A (Tc) 3W (Ta), 333W (Tc) PG-WHSON-8-U02
INFINEON
PG-WHSON-8
1680
OptiMOS™ power MOSFETs 80 V in PQFN 5x6 Source-Down DSC package with very low RDS(on).
INFINEON
PG-WHTFN-9
1680
OptiMOS™ power MOSFETs 80 V in PQFN 5x6 Source-Down Center-Gate DSC package with very low RDS(on)
INFINEON
PG-WHSON-8
1680
N Channel 60 V 42A (Ta), 445A (Tc) 3W (Ta), 333W (Tc) PG-WHSON-8-U02
INFINEON
PG-WHTFN-9
1680
N Channel 60 V 42A (Ta), 445A (Tc) 3W (Ta), 333W (Tc) PG-WHTFN-9-U02
INFINEON
PG-WHSON-8
1680
OptiMOS™ power MOSFETs 60 V in PQFN 5x6 Source-Down DSC package with industry-leading RDS(on).
INFINEON
PG-WHTFN-9
1000
OptiMOS™ Power MOSFET 40 V Normal Level in PQFN 5x6 Lower Source Centre Gate DSC Package
A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.
A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.
A: at present, our self-employed brands TI,ST,ADI,NXP,LATTICE,CYPRESS,INFINEON,XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.
A: You can inquire through the website, or by phone and email.
A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.
A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
SAK-TC1791F-512F240EP AB
The TC1791 is a high performance microcontroller with a TriCore CPU, program and data memory, bus, bus arbitration, interrupt controller, peripheral control processor and DMA controller and several on-chip peripherals.The TC1791 is designed to meet th…IKW50N65WR5
IKW50N65WR5 High Speed 650 V, 50 A Reverse Conductivity TRENCHSTOP™ 5 WR5 IGBT in TO-247 Package.IGLD65R080D2
The IGLD65R080D2 GaN power transistor can improve the efficiency of high frequency operation. As part of the CoolGaN™ 650 V G5 series, it meets the highest quality standards for highly reliable design and superior efficiency.The IGLD65R080D2 transist…IGC033S10S1
The IGC033S10S1 is a 100 V normally closed enhanced power transistor in a small PQFN 3x5 package for high power density design. Due to its low on-resistance, it is ideal for achieving reliable performance in demanding high voltage and high current app…IGC033S101
The IGC033S101 is a 100 V normally closed enhanced power transistor in a small PQFN 3x5 package for high power density design. Due to its low on-resistance, it is ideal for achieving reliable performance in demanding high voltage and high current appl…IGC025S08S1
The IGC025S08S1 is an 80 V normally closed enhanced power transistor in a small PQFN 3x5 package for high power density design. Due to its extremely low on-resistance, it is ideal for achieving reliable performance in demanding high voltage and high c…Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
CopyRight ©2022 Copyright belongs to Mingjiada Yue ICP Bei No. 05062024-12
Official QR Code
Links: