sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:RF Amplifier
Brand:NXP
Particular Year:24+
Package:DFN-6
Delivery Date:New and Original
Stock: 1500pcs
A5G23H110NT4 Overview:
This 13.8W asymmetric Doherty GaN RF power amplifier is designed for mobile base station applications operating at 2300 to 2400MHz frequencies and requiring wide instantaneous bandwidth.
The characteristics and performance of this part are suitable for applications operating in the 2300-2400MHz band. Performance cannot be guaranteed if the part is used in applications operating beyond this range.
A5G23H110NT4 Features:
High termination impedance to support excellent broadband performance
Linearised error vector magnitude using next generation signal improvements
Withstands very high output VSWR and broadband operating conditions
Suitable for linearised systems of low complexity
Optimised for 5G base station mMIMO active antenna systems
RoHS compliant
A5G23H110NT4 specification:
Technology: GaN-on-Si
Vds-drain-source breakdown voltage: 125 V
Operating frequency: 2.3 GHz to 2.4 GHz
Gain: 16.2 dB
Output power: 13.8 W
Minimum operating temperature: - 55 C
Maximum operating temperature: + 150 C
Mounting Style: SMD/SMT
Package / Case: DFN-6
Humidity Sensitivity: Yes
Number of Channels: 2 Channel
Series: A5G23H110N
Factory Package Quantity: 2500
Sub Category: MOSFETs
Type: RF Power MOSFET
Vgs - gate-source voltage: - 16 V
Vgs th-Gate-Source Threshold Voltage: - 3 V
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