sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel MOSFETs
Brand:INFINEON
Particular Year:24+
Package:PG-TO247-4-11
Delivery Date:New and Orignal
Stock: 1000pcs
The AIMZH120R030M1T automotive 1200V G1 SiC trench MOSFETs offer higher power density, higher efficiency and higher reliability. High power density, excellent efficiency, bi-directional charging capability and significant system cost reduction make them ideal for use in automotive chargers and DC-DC applications.The TO and SMD components also feature a Kelvin source pin to optimise switching performance.
Product Attributes
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain-Source Voltage (Vdss): 1200 V
Current at 25°C - Continuous Drain (Id): 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
On Resistance (Max) at Different Id, Vgs: 38 milliohms @ 27A, 20V
Vgs(th) at different Id (max): 5.1V @ 8.6mA
Gate Charge (Qg) at Vgs (max): 57 nC @ 20 V
Vgs (max): +23V, -5V
Input capacitance (Ciss) at different Vds (max): 1738 pF @ 800 V
Power Dissipation (Max): 326W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Grade: Automotive Grade
Qualification: AEC-Q101
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4-11
Package/Housing: TO-247-4
Applications
Automotive chargers and PFCs
Boosters and DC/DC converters
Auxiliary inverters
Model
Brand
Package
Quantity
Describe
ON
TO-247-3
2500
MOSFET - Power, Single N-Channel, SUPERFET V, Easy Drive, TO247-3L 600 V, 99 m, 33 A
ST
PowerFLAT-4
1000
N-channel logic level 40 V, 2.2 mΩ max., 167 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
ST
PowerFLAT-4
1000
N-channel logic level 40 V, 2.2 mΩ max., 167 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
ST
PowerFLAT-4
1000
Automotive N‑channel enhancement mode logic level 40 V, 0.75 mΩ max., 373 A STripFET F8 Power MOSFET
ST
PowerFLAT-4
1000
N-channel 100 V, 5 mΩ typ., 107 A, STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package
ST
PowerFLAT-4
1000
N-channel enhancement mode logic level 40 V, 0.8 mΩ max., 360 A, STripFET F8 Power MOSFET
A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.
A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.
A: at present, our self-employed brands TI,ST,ADI,NXP,LATTICE,CYPRESS,INFINEON,XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.
A: You can inquire through the website, or by phone and email.
A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.
A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
SAK-TC1791F-512F240EP AB
The TC1791 is a high performance microcontroller with a TriCore CPU, program and data memory, bus, bus arbitration, interrupt controller, peripheral control processor and DMA controller and several on-chip peripherals.The TC1791 is designed to meet th…AIMZA75R008M1H
AIMZA75R008M1H: Silicon Carbide CoolSiC™ MOSFET - 750V CoolSiC™ Automotive MOSFET TransistorModel: AIMZA75R008M1HPackage: PG-TO247-4Type: CoolSiC™ Automotive MOSFET TransistorAIMZA75R008M1H Product Attributes:Series: CoolSiC™FET Type: N-ChannelTecFF2600UXTR33T2M1
FF2600UXTR33T2M1: Silicon Carbide MOSFET Modules - 3.3kV, CoolSiC™ MOSFET Half Bridge Module Overviews:FF2600UXTR33T2M1 - XHP™ 2 CoolSiC™ MOSFET halfbridge module 3.3 kV, 2.5 mΩ with .XT interconnection technology for decarbonizing transportation.FF2000UXTR33T2M1
FF2000UXTR33T2M1 (Silicon Carbide MOSFET Modules): 3.3kV, CoolSiC™ MOSFET Half Bridge Module Overviews:FF2000UXTR33T2M1 - XHP™ 2 CoolSiC™ MOSFET halfbridge module 3.3 kV, 1.9 mΩ with .XT interconnection technology for decarbonizing transportation.IMBG120R034M2H
The IMBG120R034M2H is a CoolSiC MOSFET split 1200 V G2 in a TO-263-7 package. INFINEONs CoolSiC MOSFETs are based on best-in-class channeled semiconductor processes and are optimized for the lowest losses in applications and the highest reliability in…IPQC60T010S7A
The IPQC60T010S7A is a 600 V CoolMOS S7TA power MOSFET designed to meet the specific requirements of automotive electronic components.The optimized use of CoolMOS™ S7TA power transistors not only ensures excellent performance, but also enables precis…Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
CopyRight ©2022 Copyright belongs to Mingjiada Yue ICP Bei No. 05062024-12
Official QR Code
Links: