sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel MOSFETs
Brand:INFINEON
Particular Year:24+
Package:PG-TO247-4-11
Delivery Date:New and Orignal
Stock: 1000pcs
The AIMZH120R030M1T automotive 1200V G1 SiC trench MOSFETs offer higher power density, higher efficiency and higher reliability. High power density, excellent efficiency, bi-directional charging capability and significant system cost reduction make them ideal for use in automotive chargers and DC-DC applications.The TO and SMD components also feature a Kelvin source pin to optimise switching performance.
Product Attributes
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain-Source Voltage (Vdss): 1200 V
Current at 25°C - Continuous Drain (Id): 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
On Resistance (Max) at Different Id, Vgs: 38 milliohms @ 27A, 20V
Vgs(th) at different Id (max): 5.1V @ 8.6mA
Gate Charge (Qg) at Vgs (max): 57 nC @ 20 V
Vgs (max): +23V, -5V
Input capacitance (Ciss) at different Vds (max): 1738 pF @ 800 V
Power Dissipation (Max): 326W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Grade: Automotive Grade
Qualification: AEC-Q101
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4-11
Package/Housing: TO-247-4
Applications
Automotive chargers and PFCs
Boosters and DC/DC converters
Auxiliary inverters
Model
Brand
Package
Quantity
Describe
ON
TO-247-3
2500
MOSFET - Power, Single N-Channel, SUPERFET V, Easy Drive, TO247-3L 600 V, 99 m, 33 A
ST
PowerFLAT-4
1000
N-channel logic level 40 V, 2.2 mΩ max., 167 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
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