sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel MOSFET
Brand:INFINEON
Particular Year:24+
Package:PG-TO247-4
Delivery Date:New and Orignal
Stock: 1000pcs
AIMZH120R010M1T With Infineon's performance-optimised chip technology (Gen1p), the SiC Mosfet offers best-in-class switching performance, robustness against parasitic turn-on and improved RDSon and Rth(j-c). High power density, excellent efficiency, bi-directional charging capability and significantly lower system cost make them ideal for in-vehicle charger and DCDC applications.
Product Characteristics
Transistor Type: N-Channel Transistor
Technology: SiC (Silicon Carbide Junction Transistor)
Drain-to-source voltage (Vdss): 1200 В
Current at 25°C - Continuous Drain (Id): 202A (Tc).
Supply Voltage (Max Rds On, Min Rds On): 18V, 20V: 18V, 20V
On-resistance at different Id, Vgs (Max): 11.3 mOhm @ 93A, 20V
Vgs(th) at different Id (max): 5.1V @ 30mA
Gate charge (Qg) at different Vgs (max): 178 nK @ 20V
Maximum Vgs: +23 V, -5 V
Input capacitance (Ciss) at different Vds (max): 5703 pF @ 800 V
Power Dissipation (Max): 750 W (Tc): 750 W (Tc).
Operating Temperature: -55°C ~ 175°C (TJ)
Grade: Automotive Grade
Certification: AEC-Q101
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4-11
Package/Housing: TO-247-4
Applications
On-board chargers
DC/DC converters
Auxiliary Drivers
Model
Brand
Package
Quantity
Describe
ST
PowerFLAT™ 5x6
15000
Automotive Grade N-Channel 80 V, 3.15 mOhm typical, 130 A STripFET F7 Power MOSFET, PowerFLAT 5x6 Package
ST
TO-247
8000
N-Channel 950 V, 0.110 Ohm Typ, 38 A MDmesh K5 Power MOSFET, TO-247 Package
ST
TO-247-3
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N-Channel 600 V, 61 mOhm Typ, 39 A MDmesh M6 Power MOSFET, TO-247 Package
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TO-220-3
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