sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel MOSFET
Brand:INFINEON
Particular Year:24+
Package:PG-TO247-4
Delivery Date:New and Orignal
Stock: 1000pcs
AIMZHN120R120M1T With Infineon's performance-optimised chip technology (Gen1p), the SiC Mosfet offers best-in-class switching performance, robustness to parasitic turn-on and improved RDSon and Rth(j-c). High power density, excellent efficiency, bi-directional charging capability and significantly lower system cost make them ideal for in-car charger and DCDC applications.
Product Characteristics
Transistor Type: N-Channel Transistor
Technology: SiC (Silicon Carbide Junction Transistor)
Drain-to-source voltage (Vdss): 1200 В
Current at 25°C - Continuous Drain (Id): 22A (Tc)
Supply Voltage (Max Rds On, Min Rds On): 18V, 20V 18V, 20V
Switching Resistance at Different Id, Vgs (Max): 150 mOhm @ 7A, 20V
Vgs(th) at different Id (max): 5.1V @ 2.2V 5.1V @ 2.2mA
Gate charge (Qg) at different Vgs (max): 18 nC @ 20V
Vgs max: +23 V, -5 V
Input capacitance (Ciss) at different Vds (max): 458 pF @ 800 V
Power Dissipation (Max): 133 W (Tc).
Operating Temperature: -55°C ~ 175°C (TJ)
Grade: Automotive Grade
Certification: AEC-Q101
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4-14
Package/Housing: TO-247-4
Applications
On-board chargers
DC/DC converters
Auxiliary Drivers
Model
Brand
Package
Quantity
Describe
ON
TO-247-3
2500
MOSFET - Power, Single N-Channel, SUPERFET V, Easy Drive, TO247-3L 600 V, 99 m, 33 A
ST
PowerFLAT-4
1000
N-channel logic level 40 V, 2.2 mΩ max., 167 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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