sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel MOSFETs
Brand:INFINEON
Particular Year:24+
Package:PG-TO263-7-12
Delivery Date:New and Orignal
Stock: 1000pcs
The IMBG120R234M2H CoolSiC™ MOSFET 1200 V, 234 mΩ G2 in D2PAK-7L (TO-263-7) package builds on the advantages of Gen 1 technology to accelerate system design for cost-optimised, efficient, compact and reliable solutions. Generation 2 products offer significant improvements in key performance metrics for both hard-switching operation and soft-switching topologies for all common AC-DC, DC-DC and DC-AC class combinations.
Product Attributes
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain-source voltage (Vdss): 1200 V
Current at 25°C - Continuous Drain (Id): 8.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
On Resistance (Max) at Different Id, Vgs: 233.9 mOhm @ 3A, 18V
Vgs(th) at different Id (max): 5.1V @ 900µA
Gate Charge (Qg) (max) at varying Vgs: 7.9 nC @ 18 V
Vgs (max): +20V, -7V
Input capacitance (Ciss) at different Vds (max): 290 pF @ 800 V
Power Dissipation (Max): 80W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-12
Package/Housing: TO-263-8, D2PAK (7-lead + Tab), TO-263CA
Applications
Electric vehicle charging
Industrial motor drives and controls
Photovoltaics
Uninterruptible Power Supplies (UPS)
Model
Brand
Package
Quantity
Describe
ST
PowerFLAT-4
1000
N-channel logic level 40 V, 2.2 mΩ max., 167 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
ST
PowerFLAT-4
1000
N-channel logic level 40 V, 2.2 mΩ max., 167 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
ST
PowerFLAT-4
1000
Automotive N‑channel enhancement mode logic level 40 V, 0.75 mΩ max., 373 A STripFET F8 Power MOSFET
ST
PowerFLAT-4
1000
N-channel 100 V, 5 mΩ typ., 107 A, STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package
ST
PowerFLAT-4
1000
N-channel enhancement mode logic level 40 V, 0.8 mΩ max., 360 A, STripFET F8 Power MOSFET
ST
PowerFLAT-4
1000
N‑channel 100 V, 3.2 mΩ max., 158 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
INFINEON
PG-TO247-4-11
1000
Through Hole N Channel 1200 V 69A (Tc) 326W (Tc) PG-TO247-4-11
INFINEON
PG-TO247-4-14
1000
Through Hole N Channel 1200 V 17A (Tc) 109W (Tc) PG-TO247-4-14
INFINEON
PG-TO247-4-14
1000
Through Hole N Channel 1200 V 31A (Tc) 169W (Tc) PG-TO247-4-14
INFINEON
PG-TO247-4-11
1000
Through Hole N Channel 1200 V 202A (Tc) 750W (Tc) PG-TO247-4-11
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