sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel MOSFETs
Brand:INFINEON
Particular Year:24+
Package:PG-TO247-4
Delivery Date:New and Orignal
Stock: 1000pcs
AIMZH120R080M1T With Infineon's performance-optimised chip technology (Gen1p), the SiC Mosfet offers best-in-class switching performance, robustness against parasitic turn-on and improved RDSon and Rth(j-c). High power density, excellent efficiency, bi-directional charging capability and significantly lower system cost make them ideal for in-vehicle charger and DCDC applications.
Product Characteristics
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor) SiC (Silicon Carbide Junction Transistor)
Drain-Source Voltage (Vdss): 1200 V
Current at 25°C - Continuous Drain (Id): 31A (Tc)
Drive Voltage (Maximum Rds on, Minimum Rds on): 18V, 20V 18V, 20V
On-resistance at different Id, Vgs (max): 100 mOhm @ 10A 100 mOhm @ 10A, 20V
Vgs at different Id (max): 5.1V @ 3.3mA
Gate charge (Qg) at different Vgs (max): 5.1V @ 3.3mA 24 nC @ 20 V
Vgs (max): +23V, -5V +23V, -5V
Input capacitance (Ciss) at different Vds (max): 671 pF @ 800 V
Power Dissipation (Max): 169 W (Tc) 169 W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Grade Automotive
Qualification: AEC-Q101 AEC-Q101
Mounting Type: Through Hole Through Hole
Supplier Device Package: PG-TO247-4-11
Package/Housing TO-247-4
Applications
On-board chargers
DC/DC converters
Auxiliary Drivers
Model
Brand
Package
Quantity
Describe
ST
PowerFLAT-4
1000
N-channel logic level 40 V, 2.2 mΩ max., 167 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
ST
PowerFLAT-4
1000
N-channel logic level 40 V, 2.2 mΩ max., 167 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
ST
PowerFLAT-4
1000
Automotive N‑channel enhancement mode logic level 40 V, 0.75 mΩ max., 373 A STripFET F8 Power MOSFET
ST
PowerFLAT-4
1000
N-channel 100 V, 5 mΩ typ., 107 A, STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package
ST
PowerFLAT-4
1000
N-channel enhancement mode logic level 40 V, 0.8 mΩ max., 360 A, STripFET F8 Power MOSFET
ST
PowerFLAT-4
1000
N‑channel 100 V, 3.2 mΩ max., 158 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
INFINEON
PG-TO247-4-11
1000
Through Hole N Channel 1200 V 69A (Tc) 326W (Tc) PG-TO247-4-11
INFINEON
PG-TO247-4-14
1000
Through Hole N Channel 1200 V 17A (Tc) 109W (Tc) PG-TO247-4-14
INFINEON
PG-TO247-4
1000
Through Hole N Channel 1200 V 31A (Tc) 169W (Tc) PG-TO247-4-14
INFINEON
PG-TO247-4
1000
Through Hole N Channel 1200 V 202A (Tc) 750W (Tc) PG-TO247-4-11
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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