sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel MOSFETs
Brand:INFINEON
Particular Year:24+
Package:PG-TO247-4
Delivery Date:New and Orignal
Stock: 1000pcs
The AIMZA75R040M1H takes advantage of the properties of wide-bandgap SiC materials. The 750VCoolSiC™ MOSFET is built on solid-state silicon crucible technology developed by Infineon for more than 20 years, achieving a unique combination of performance, reliability and fusibility. It is suitable for high temperature and high humidity operation for the most simplified, cost-effective and highest system efficiency deployment.
Product Characteristics
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor) SiC (Silicon Carbide Junction Transistor)
Drain-Source Voltage (Vdss): 750 V
Current at 25°C - Continuous Drain (Id): 44A (Tj)
Drive Voltage (Maximum Rds on, Minimum Rds on): 15V, 20V 15V, 20V
On-resistance at different Id, Vgs (max): 37 mOhm @ 16.6A, 20V
Vgs(th) at different Id (max): 5.6V @ 6mA
Gate Charge (Qg) at Vgs (max): 5.6V @ 6mA 34 nC @ 18 V
Vgs (max): +23V, -5V +23V, -5V
Input capacitance (Ciss) at different Vds (max): 1135 pF @ 500 V
Power Dissipation (Max): 185 W (Tc) 185 W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Grade: Automotive Grade Automotive Grade
Qualification: AEC-Q101 AEC-Q101
Mounting Type: Through Hole Through Hole
Supplier Device Package: PG-TO247-4
Package/Housing TO-247-4
Applications
Unidirectional and bidirectional on-board chargers and HV-LV DC converters:
Hard Switched Half Bridge
Soft-switching topologies
Model
Brand
Package
Quantity
Describe
IXYS
TO-252-3
5000
Surface Mount Type N-Channel 1200 V 200 mA (Tc) 33 W (Tc) TO-252AA
ST
PowerFLAT 5x6
1500
N-channel 60 V, 1.2 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
ST
PowerFLAT™ 5x6
15000
Automotive Grade N-Channel 80 V, 3.15 mOhm typical, 130 A STripFET F7 Power MOSFET, PowerFLAT 5x6 Package
ST
TO-247
8000
N-Channel 950 V, 0.110 Ohm Typ, 38 A MDmesh K5 Power MOSFET, TO-247 Package
ST
TO-247-3
1000
N-Channel 600 V, 61 mOhm Typ, 39 A MDmesh M6 Power MOSFET, TO-247 Package
ST
TO-220-3
50000
N-Channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET, TO-220FP Package
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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