sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:HMC8411LP2FE
Data Manual:HMC8411LP2FE.pdf
Brand:ADI
Particular Year:23+
Package:6-VDFN
Delivery Date:New and Original
Stock: 1000pcs
The HMC8411LP2FE is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudo-amorphous high electron mobility transistor (pHEMT), low noise broadband amplifier. Operating from 0.01 GHz to 10 GHz, with 15.5 dB typical gain, 1.7 dB typical noise figure, 34 dBm typical output third-order intercept (OIP3), and requiring only 55 mA of 5 V supply voltage. The saturated output power (PSAT) is 19.5 dBm typical, allowing the low noise amplifier (LNA) to be used as a local oscillator (LO) driver for image suppression mixers.
Product Characteristics
Frequency: 10MHz ~ 10GHz
P1dB: 17dBm
Gain: 14dB
Noise Figure: 2dB
RF Type: General Purpose
Voltage - Power: 2V ~ 6V
Current - Supply: 55mA
Test Frequency: 6GHz ~ 10GHz
Mounting Type: Surface Mount
Package/Housing: 6-VDFN (with open area), CSP
Power Supply Included: 6-LFCSP (2x2)
Applications
● Test Instruments
● Military communications
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The full name of Analog Devices is Analog Devices, Inc. (ADI). As an outstanding supplier specializing in semiconductor sensors and signal processing ICs, adi regards innovation, performance and excellence as the cultural pillars of the company and ha…
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