sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:ADRF5130BCPZ
Data Manual:ADRF5130BCPZ.pdf
Brand:ADI
Particular Year:23+
Package:24-VFQFN
Delivery Date:New and Original
Stock: 1000pcs
The ADRF5130BCPZ is a high-power, reflective, 0.7 GHz to 3.8 GHz, silicon single-pole, double-throw (SPDT) switch in a lead-free, surface-mount package. The switch is ideally suited for high power and cellular infrastructure applications such as Long Term Evolution cellular infrastructure applications (e.g., Long Term Evolution (LTE) base stations.) The ADRF5130BCPZ has a high power handling capability of 43 dBm (max) and 0.1 dB compression. The ADRF5130BCPZ features high power handling of 43 dBm (maximum) and 0.1 dB compression (P0.1 dB) at 46 dBm, with insertion loss as low as 0.6 dB at 2 GHz and 0.7 dB at 3.5 GHz. The on-chip circuitry operates with only a positive supply voltage of 5 V and a typical supply current of 1.06 m, making it an ideal alternative to pin-diode-based switches.
Product Attributes
Topology: Reflective
Circuit: SPDT
Frequency Range: 700MHz ~ 3.5GHz
Isolation: 50dB
Insertion Loss: 0.6dB
Test Frequency: 2GHz
IIP3: 65dBm
Impedance: 50 Ohm
Voltage - Supply: 5V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package/Shell: 24-VFQFN Exposed Pad
Supplier Device Package: 24-LFCSP (4x4)
Applications
● Cellular/4G infrastructure
● Wireless infrastructure
● Military and high reliability applications
● Test equipment
● Pin diode replacement
Model
Brand
Package
Quantity
Describe
Renesas
20-VFQFPN
2500
75ohm SP2T Absorptive RF Switch 5MHz to 3000MHz with RFC Termination
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