sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:RF Switch
Brand:ADI
Particular Year:25+
Package:QFN-16
Delivery Date:New and Original
Stock: 2000pcs
The HMC849ALP4CE is a high-isolation, non-reflective DC to 6 GHz GaAs pHEMT SPDT switch in a low-cost, leadless surface-mount package. This switch is ideal for cellular/WiMAX/4G infrastructure applications, offering up to 60 dB isolation, 0.8 dB low insertion loss, and +52 dBm input IP3. Within the highest 5–6 GHz WiMAX frequency band, the device exhibits high power handling capability and provides +31 dBm P1dB compression point performance. The on-chip circuitry enables single positive voltage control at 0/+3 V or 0/+5 V with extremely low DC current. Setting the enable input (EN) to a logic high level places the switch in the ‘fully off’ state.
HMC849ALP4CE Features:
High isolation: Up to 60 dB
Single positive control voltage: 0/+3V to +5V
High input IP3: +52 dBm
Non-reflective design
‘Fully off’ state
16-pin 4x4mm SMT package: 16mm²
Typical applications
The HMC849ALP4CE is suitable for:
Cellular/4G infrastructure
WiMAX, WiBro, and fixed wireless
Automotive telematics
Mobile radio
Test equipment
HMC849ALP4CE Technical Specifications:
Switch Configuration: SPDT
Minimum Frequency: 0 Hz
Maximum Frequency: 6 GHz
Insertion Loss: 1.8 dB
Off Isolation—Typical: 50 dB
Minimum Operating Temperature: -40°C
Maximum Operating Temperature: +85°C
Mounting Style: SMD/SMT
Package/Case: QFN-16
Technology: GaAs
Series: HMC849
Number of Switches: Dual
Operating Current: 1.3 mA
Pd-Power Dissipation: 969 mW
Supply Voltage - Maximum: 5 V
Supply Voltage - Minimum: 3 V
Model
Brand
Package
Quantity
Describe
Renesas
20-VFQFPN
2500
75ohm SP2T Absorptive RF Switch 5MHz to 3000MHz with RFC Termination
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