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sales@hkmjd.com
sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) MOSFET
Brand:Wolfspeed
Particular Year:24+
Package:TO-247-4
Delivery Date:New and original
Stock: 3000pcs
The E4M0015075K1 is A 750 V, 15 mΩ, 128 A fourth generation discrete silicon carbide MOSFET in TO-247-4 package.
Wolfspeed has extended its technology with the launch of the fourth-generation 750 V E-Series automotive certified, PPAP and moisture resistant silicon Carbide (SiC) MOSFETs. Expand our product portfolio with the industry standard thin TO-247-4 (K1) package. The E Series MOSFETs are optimized for electric vehicle HVAC motor drives, electric vehicle on-board chargers and high voltage DC/DC converters, as reflected in Wolfspeed's 22kW bidirectional efficient DC/DC converter reference design.
Features
Automotive certification (AEC-Q101) and PPAP capability
High breakdown voltage throughout the operating temperature range
High speed switch with low output capacitance
High blocking voltage (on) at low RDS
Fast intrinsic diodes with low reverse recovery (Qrr)
Model
Brand
Package
Quantity
Describe
TOSHIBA
TO-247-4
4333
SiC MOSFET Through hole N channel 1200 V 20A (Tc) 107W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 36A (Tc) 170W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 40A (Tc) 182W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 100A (Tc) 431W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 100A (Tc) 342W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 58A (Tc) 156W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N channel 650 V 20A (Tc) 76W (Tc) TO-247-4L (X)
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Wolfspeed (NYSE: NYSE) is a market leader in the global adoption of silicon carbide and GaN technologies. We provide industry-leading solutions for efficient energy consumption and a sustainable future, and our product portfolio includes silicon carbi…
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