sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:MOSFET Transistors
Brand:Wolfspeed
Particular Year:24+
Package:TO-247-3
Delivery Date:New and Original
Stock: 2000pcs
C3M0120065D - 650V, 120mΩ, 22A, Discrete SiC N-Channel Enhancement Mode MOSFET Transistor in TO-247-3 package
Product Description
C3M0120065D is 650V Discrete Silicon Carbide N-Channel Enhancement Mode MOSFET Transistor in TO-247-3 package. The 650 V MOSFET product family is ideal for applications including high performance industrial power supplies, server/telecom power, electric vehicle charging systems, energy storage systems, uninterruptible power supplies, and battery management systems.
Key Features
Low On-State Resistance over Temperature
Low Parasitic Capacitances
Fast Diode with ultra low reverse recovery
High Temperature Operation (TJ = 175°C)
Kelvin Source Pin
Industry Standard Through-Hole & SMT Packages
Small form factor
Low lead inductance
Low Thermal Impedance
Benefits
Improves System Efficiency with lower switching and conduction losses
Enables high switching frequency operation
Improves System Level Power Density
Reduces System Size; Weight; and Cooling Requirements
Enables new hard switching topologies (Totem-Pole PFC)
Model
Brand
Package
Quantity
Describe
Wolfspeed
TO-247-3
2000
650V, 60mΩ, 37A Silicon Carbide Power MOSFET Transistors TO-247-3
Wolfspeed
TO-247-4
2000
650V, 60mΩ, 37A Silicon Carbide Power MOSFET Transistors TO-247-4
Wolfspeed
TO-247-3
2000
650V, 45mΩ, 49A Silicon Carbide Power MOSFET Transistors TO-247-3
Wolfspeed
TO-263-7
2000
650V, 45mΩ, 47A, Silicon Carbide Power MOSFET Transistors TO-263-7
A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.
A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.
A: at present, our self-employed brands TI,ST,ADI,NXP,LATTICE,CYPRESS,INFINEON,XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.
A: You can inquire through the website, or by phone and email.
A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.
A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
Wolfspeed (NYSE: NYSE) is a market leader in the global adoption of silicon carbide and GaN technologies. We provide industry-leading solutions for efficient energy consumption and a sustainable future, and our product portfolio includes silicon carbi…
CAB6R0A23GM4T
CAB6R0A23GM4T is 2300 V, 6 mΩ, GM package, Half-Bridge SiC Power Module with Pre-Applied Thermal Interface Material.Feature of CAB6R0A23GM4TLeading silicon carbide MOSFET technology in an industry standard form factorHigh CTI housing to reduce creepa…CAB7R5A23GM4T
CAB7R5A23GM4T is 2300 V, 7.5 mΩ, GM package, Half-Bridge SiC Power Module with Pre-Applied Thermal Interface Material.Feature of CAB7R5A23GM4TLeading silicon carbide MOSFET technology in an industry standard form factorHigh CTI housing to reduce cree…CAB5R0A23GM4T
CAB5R0A23GM4T is 2300 V, 5 mΩ, GM package, Half-Bridge SiC Power Module with Pre-Applied Thermal Interface Material.Feature of CAB5R0A23GM4TLeading silicon carbide MOSFET technology in an industry standard form factorHigh CTI housing to reduce creepa…C3M0280090J
The C3M0280090J is a 900 V silicon carbide power MOSFET with a wide creepage distance and a gap distance (~8mm) between drain and source. The device is optimized for high frequency power electronics applications. Typical applications include: renewabl…C3M0160120D
The C3M0160120D is A 1200 V, 160 mΩ, 17 A silicon carbide power MOSFET based on third-generation planar MOSFET technology with high blocking voltage, low on-resistance, and low capacitance high-speed switching. The MOSFET is available in a small TO-2…C3M0350120J
The C3M0350120J is A 1200 V, 7.2 A silicon carbide power MOSFET based on third-generation planar MOSFET technology with a high blocking voltage, low on-resistance, and low capacitance high-speed switch. The MOSFET is available in a small TO-263-7 pack…Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
CopyRight ©2022 Copyright belongs to Mingjiada Yue ICP Bei No. 05062024-12
Official QR Code
Links: