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Product Description:1200V 2.67mΩ 62mm Half-Bridge SiC Power Module
Package:ModuleProduct Description:650 V, 16 A, TO-247-2 package, 6th generation discrete silicon carbide Schottky diode
Package:TO-247-2Product Description:1200V 2.6 mΩ XM3 Half-Bridge SiC Power Module
Package:ModuleProduct Description:1700V, 25A Silicon Carbide (SiC) Schottky Diodes, TO-247-2
Package:TO-247-2Product Description:600V 8A Gen 3 Discrete SiC Schottky Diode
Package:TO-220-2Product Description:650 V, 16 A, TO-263-2 package, 6th generation discrete silicon carbide Schottky diode
Package:TO-263-2Product Description:1200V 2.67mΩ 62mm Half-Bridge SiC Power Module
Package:ModuleProduct Description:1700V, 5A Silicon Carbide (SiC) Schottky Diodes, TO-247-2
Package:TO-247-2Product Description:650 V, 16 A, TO-220-2 package, 6th generation discrete silicon carbide Schottky diode
Package:TO-220-2Product Description:1200V, 16mΩ, 115A Silicon Carbide (SiC) MOSFET Transistors, TO-247-4
Package:TO-247-4Product Description:650V Discrete Silicon Carbide MOSFET Transistors in TO-247-4 package
Package:TO-247-4Product Description:1.7kV SiC N-Channel Enhancement Mode MOSFET Transistors, TO-247-4
Package:TO-247-4Product Description:1200V, 300 A Silicon Carbide Half-Bridge Module
Package:ModuleProduct Description:1000V N-Channel Enhancement Mode MOSFET Transistors, TO-263-7
Package:TO-263-7Product Description:1200V SiC Power MOSFET C3M™ MOSFET Transistors, TO-263-7
Package:TO-263-7Product Description:1000V 120mOhm N-Channel Enhancement Mode MOSFET Transistors, TO-263-7
Package:TO-263-7Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
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E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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