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Shenzhen  Mingjiada Electronics Co., Ltd.

Service Telephone:86-755-83294757

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CAB530M12BM3

Product Description:1200V 2.67mΩ 62mm Half-Bridge SiC Power Module

Package:Module
10pcs
1000
1 +
10 +
25 +
50 +
>=100
E6D16065H

Product Description:650 V, 16 A, TO-247-2 package, 6th generation discrete silicon carbide Schottky diode

Package:TO-247-2
10pcs
3000
1 +
10 +
25 +
50 +
>=100
CAB450M12XM3

Product Description:1200V 2.6 mΩ XM3 Half-Bridge SiC Power Module

Package:Module
10pcs
1000
1 +
10 +
25 +
50 +
>=100
C6D25170H

Product Description:​1700V, 25A Silicon Carbide (SiC) Schottky Diodes, TO-247-2

Package:TO-247-2
10pcs
2000
1 +
10 +
25 +
50 +
>=100
C3D08060A

Product Description:600V 8A Gen 3 Discrete SiC Schottky Diode

Package:TO-220-2
10pcs
1000
1 +
10 +
25 +
50 +
>=100
E6D16065G

Product Description:650 V, 16 A, TO-263-2 package, 6th generation discrete silicon carbide Schottky diode

Package:TO-263-2
10pcs
3000
1 +
10 +
25 +
50 +
>=100
CAS530M12BM3

Product Description:1200V 2.67mΩ 62mm Half-Bridge SiC Power Module

Package:Module
10pcs
1000
1 +
10 +
25 +
50 +
>=100
C6D05170H

Product Description:​1700V, 5A Silicon Carbide (SiC) Schottky Diodes, TO-247-2

Package:TO-247-2
10pcs
2000
1 +
10 +
25 +
50 +
>=100
E6D16065A

Product Description:650 V, 16 A, TO-220-2 package, 6th generation discrete silicon carbide Schottky diode

Package:TO-220-2
10pcs
3000
1 +
10 +
25 +
50 +
>=100
C3M0016120K

Product Description:1200V, 16mΩ, 115A Silicon Carbide (SiC) MOSFET Transistors, TO-247-4

Package:TO-247-4
10pcs
2000
1 +
10 +
25 +
50 +
>=100
C3M0015065K

Product Description:650V Discrete Silicon Carbide MOSFET Transistors in TO-247-4 package

Package:TO-247-4
10pcs
2000
1 +
10 +
25 +
50 +
>=100
C2M0045170P

Product Description:1.7kV SiC N-Channel Enhancement Mode MOSFET Transistors, TO-247-4

Package:TO-247-4
10pcs
2000
1 +
10 +
25 +
50 +
>=100
WAB300M12BM3

Product Description:1200V, 300 A Silicon Carbide Half-Bridge Module

Package:Module
10pcs
1000
1 +
10 +
25 +
50 +
>=100
C3M0065100J

Product Description:1000V N-Channel Enhancement Mode MOSFET Transistors, TO-263-7

Package:TO-263-7
10pcs
2000
1 +
10 +
25 +
50 +
>=100
C3M0160120J

Product Description:1200V SiC Power MOSFET C3M™ MOSFET Transistors, TO-263-7

Package:TO-263-7
10pcs
2000
1 +
10 +
25 +
50 +
>=100
C3M0120100J

Product Description:1000V 120mOhm N-Channel Enhancement Mode MOSFET Transistors, TO-263-7

Package:TO-263-7
10pcs
2000
1 +
10 +
25 +
50 +
>=100
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Contact Number:86-755-83294757

Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585

Business Hours:9:00-18:00

E-mail:sales@hkmjd.com

Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong

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