sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:MOSFET Transistors
Brand:Wolfspeed
Particular Year:24+
Package:TO-247-4
Delivery Date:New and Original
Stock: 2000pcs
C3M0120065K is 650V Discrete Silicon Carbide N-Channel Enhancement Mode MOSFET Transistor in TO-247-4 package. Wolfspeed extends its Silicon Carbide (SiC) technology leadership with the introduction of 3rd-Generation 650 V MOSFETs, enabling smaller, lighter, and highly-efficient power conversion in an even wider range of power systems. The 650 V MOSFET product family is ideal for applications including high performance industrial power supplies, server/telecom power, electric vehicle charging systems, energy storage systems, uninterruptible power supplies, and battery management systems.
C3M0120065K - 650V, 120mΩ, 22A, Discrete SiC N-Channel Enhancement Mode MOSFET Transistor in TO-247-4 package
Key Features
Low On-State Resistance over Temperature
Fast Diode with ultra low reverse recovery
High Temperature Operation (TJ = 175°C)
Low lead inductance
Low Thermal Impedance
Improves System Efficiency with lower switching and conduction losses
Enables high switching frequency operation
Improves System Level Power Density
Model
Brand
Package
Quantity
Describe
Wolfspeed
TO-247-3
2000
650V, 60mΩ, 37A Silicon Carbide Power MOSFET Transistors TO-247-3
Wolfspeed
TO-247-4
2000
650V, 60mΩ, 37A Silicon Carbide Power MOSFET Transistors TO-247-4
Wolfspeed
TO-247-3
2000
650V, 45mΩ, 49A Silicon Carbide Power MOSFET Transistors TO-247-3
Wolfspeed
TO-263-7
2000
650V, 45mΩ, 47A, Silicon Carbide Power MOSFET Transistors TO-263-7
Wolfspeed
TO-263-7
2000
1200V, 40mΩ, 64A, Silicon Carbide Power MOSFET Transistors TO-263-7
Wolfspeed
TO-247-4
2000
1200V, 40mΩ, 66A, Silicon Carbide Power MOSFET Transistors TO-247-4
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Wolfspeed (NYSE: NYSE) is a market leader in the global adoption of silicon carbide and GaN technologies. We provide industry-leading solutions for efficient energy consumption and a sustainable future, and our product portfolio includes silicon carbi…
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