sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:FGH75T65SHD-F155
Data Manual:FGH75T65SHD-F155.pdf
Brand:ON
Particular Year:23+
Package:TO-247-3
Delivery Date:New and Original
Stock: 5000pcs
ON Semiconductor's new field cutoff Gen 3 IGBT family features a new field cutoff IGBT technology that delivers optimal performance for applications where low conduction and switching losses are critical, such as solar inverters, UPSs, welders, telecom, ESS and PFC.
Characteristics
Maximum junction temperature: TJ =175°C
Positive temperature coefficient for easy parallel operation
High current capability
Low saturation voltage: VCE(sat) = 1.6 V (typical) @ IC = 75 A
ILM(1) parts 100% detected
High input impedance
Fast switching
Tight parameter distribution
RoHS compliant
FGH75T65SHD-F155 Product Attributes
IGBT Type: Trench Field Cutoff
Voltage - Collector Breakdown (max): 650 V
Current - Collector (Ic) (max): 150 A
Current - Collector pulse (Icm): 225 A
Vce(on) at varying Vge, Ic (max): 2.1V @ 15V, 75A
Power - Max: 455 W
Switching Energy: 2.4mJ (on), 720µJ (off)
Input Type: Standard
Gate Charge: 123 nC
Td (On/Off) at 25°C: 28ns/80ns
Test Conditions: 400V, 75A, 3 Ohms, 15V
Reverse Recovery Time (trr): 43.4 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package/Housing: TO-247-3
Supplier Device Package: TO-247-3
Applications
- Solar Inverter, UPS, Welder, PFC, Telecom, ESS, PFC
Model
Brand
Package
Quantity
Describe
ST
D2PAK-3
5000
Insulated Gate Bipolar Transistors (IGBTs) 20 A - 600 V - short circuit rugged IGBTs
INFINEON
PG-TO220-3
5000
600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package
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