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RGS30TSX2DHRC11: 1200V, 15A, trench-type field-stop IGBT transistor, TO-247N-3

RGS30TSX2DHRC11 is a car-grade (AEC-Q101) IGBT transistor developed by Rohm, featuring advanced trench-type field-stop technology, with a blocking voltage of 1200V and a rated current of 30A (at 25°C). Its core advantages lie in low conduction loss (VCE(sat)) and optimised switching performance. The TO-247N-3 insulated package simplifies heat sink installation and enhances system reliability. The device integrates a fast recovery freewheeling diode (FWD) internally. It is specifically designed for automotive and industrial power electronic systems requiring high efficiency, high power density, and high reliability, particularly in applications related to electric vehicle powertrains.

RGS30TSX2DHRC11 Product Specifications:

IGBT Type: Trench Field-Stop

Voltage - Collector-Emitter Breakdown (Maximum): 1200 V

Current - Collector (Ic) (Max): 30 A  

Current - Collector Pulse (Icm): 45 A  

Vce(on) at Different Vge and Ic (Max): 2.1 V @ 15 V, 15 A  

Power - Maximum: 267 W

Switching Energy: 740 µJ (On), 600 µJ (Off)  

Input Type: Standard  

Gate Charge: 41 nC  

Td (On/Off) Value at 25°C: 30 ns/70 ns  

Test Conditions: 600 V, 15 A, 10 Ω, 15 V  

Reverse Recovery Time (trr): 157 ns

Operating temperature: -40°C to 175°C (TJ)  

Mounting type: Through-hole  

Package/housing: TO-247-3  

Supplier device package: TO-247N

RGS30TSX2DHRC11 Product features:

Low collector-emitter saturation voltage  

Short-circuit withstand time: 10 μs  

Compliant with AEC-Q101 standards  

Built-in ultra-fast and gentle recovery FRD  

Lead-free plating; compliant with RoHS standards  

RGS30TSX2DHRC11 Applications:

General-purpose inverters for automotive and industrial applications  

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