sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IKWH50N65WR6XKSA1
Data Manual:IKWH50N65WR6XKSA1.pdf
Brand:INFINEON
Particular Year:23+
Package:TO-247-3
Delivery Date:New original
Stock: 2000pcs
The IKWH50N65WR6XKSA1 650V discrete IGBT is packaged in TO-247-3-HCC, enabling a rich product portfolio with a rated current of 50A, easily replacing the previous generation technology. Such as Infineon TRENCHSTOP 5 WR5, HighSpeed 3 H3 technology. The device is optimized for power factor correction (PFC) for home and commercial air conditioning systems as well as welding applications.
Product Specifications:
IGBT type: trench type field cut-off
Voltage-emitter breakdown (Max) : 650 V
Current - Collector (Ic) (Max) : 85 A
Current-collector pulse (Icm) : 150 A
Vce(on) (Max.) for different Vge and Ic: 1.85V@15V, 50A
Power - Max. : 205 W
Switching power: 1.5mJ (on), 730µJ (off)
Input type: Standard
Grid charge: 144 nC
Td (On/off) at 25°C: 40ns/351ns
Test conditions: 400V, 50A, 22 ohms, 15V
Operating temperature: -40°C ~ 175°C (TJ)
Installation type: Through hole
Package/housing: TO-247-3
Supplier device package: PG-TO247-3-32
Model
Brand
Package
Quantity
Describe
ST
D2PAK-3
5000
Insulated Gate Bipolar Transistors (IGBTs) 20 A - 600 V - short circuit rugged IGBTs
INFINEON
PG-TO220-3
5000
600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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