sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:RF Switch
Brand:ADI
Particular Year:23+
Package:LFCSP-16
Delivery Date:New and Original
Stock: 5000pcs
The HMC8038LP4CETR is a high-isolation, non-reflective, 0.1 GHz to 6.0 GH, single-pole double-throw (SPDT) switch chip in a leadless, surface-mount package. Ideal for cellular infrastructure applications, the switch enables 62 dB isolation up to 4.0 GHz, 0.8 dB low insertion loss up to 4.0 GHz, and 60 dBm input third-order intermodulation intercept. Boasts excellent power handling capabilities up to 6.0 GHz and delivers input power (VDD = 5 V) at 0.1 dB compression point (P0.1dB) for 35 dBm. The on-chip circuit uses a single positive supply voltage of 3.3 V to 5 V at very low DC, and a single positive voltage control of 0 V to 1.8 V/3. 3 V/5. 0 V. Setting the enable input (EN) to logic high places the switch in a fully off state, where the RFC is reflective.
The device pins of the HMC8038LP4CETR are ESD protected, including the RF interface, and can withstand 4 kV HMB and 1.25 kV CDM. The HMC8038LP4CETR provides fast switching and RF settling time performance of 150 ns and 170 ns, respectively. The device is available in a compact, RoHS-compliant 4 mm × 4 mm LFCSP package.
Characteristics-HMC8038LP4CETR
Non-reflective 50 Ω design
High isolation: 60 dB (typical)
Low insertion loss: 0.8 dB (typical)
High power handling
34 dBm (via path)
29 dBm (termination path)
High linearity
0.1 dB compression (P0.1dB): 35 dBm (typical)
Input third-order intermodulation intercept (IP3): 60 dBm (typical)
ESD rating
4 kV Mannequin (HBM), Class 3A
1.25 kV Charger Model (CDM)
Single positive power supply
3.3 V to 5 V
1.8 V compatible control
Application-HMC8038LP4CETR
Cellular/4G Infrastructure
Wireless infrastructure
Automotive telematics system
Mobile radio
Test equipment
Model
Brand
Package
Quantity
Describe
Renesas
20-VFQFPN
2500
75ohm SP2T Absorptive RF Switch 5MHz to 3000MHz with RFC Termination
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